SCHEMBL687031

SCHEMBL687031

CC(=O)OCC(F)(F)S(=O)(=O)O

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.37
LMNA P02545 1/20 0.37
HSD17B10 Q99714 1/20 0.37
TDP1 Q9NUW8 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.34
CHRM5 P08912 2/20 0.31
CHRM1 P11229 2/20 0.31
CHRM3 P20309 2/20 0.31
HTT P42858 1/20 0.31
PGR P06401 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
HTR1A P08908 1/20 0.31
CHRNB2 P17787 1/20 0.31
TBXA2R P21731 1/20 0.31
CHRNB4 P30926 1/20 0.31
CHRNA3 P32297 1/20 0.31
CHRNA7 P36544 1/20 0.31
CHRNA4 P43681 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18785853 0.87 ALDH1A1 (0.31) ALDH1A1LMNAHSD17B10TDP1
SCHEMBL686743 0.85 ALDH1A1 (0.36) ALDH1A1LMNAHSD17B10TDP1L3MBTL1
SCHEMBL17403610 0.83 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL12895538 0.83 ALDH1A1 (0.37) ALDH1A1LMNAHSD17B10TDP1CHRM5
SCHEMBL25812952 0.81 ALDH1A1 (0.36) ALDH1A1LMNAHSD17B10TDP1L3MBTL1
SCHEMBL2624987 0.80 TSHR (0.41) ALDH1A1L3MBTL1TSHR
SCHEMBL19320562 0.80 ALDH1A1 (0.39) ALDH1A1LMNAHSD17B10CHRM5CHRM1
SCHEMBL10144862 0.79 ALDH1A1 (0.34) ALDH1A1LMNAHSD17B10
SCHEMBL687033 0.79 ALDH1A1 (0.34) ALDH1A1LMNAHSD17B10L3MBTL1
SCHEMBL11917863 0.79 HTT (0.38) ALDH1A1L3MBTL1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 229 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-12 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-11822245-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-21 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-11796916-B2 Pattern formation methods and photoresist pattern overcoat compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-10-24 US disclosed
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110200935-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-14 US disclosed
US-20110123926-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-05-26 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110034721-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20090234155-A1 Acid generating agent for chemically amplified resist compositions KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2009-09-17 US disclosed
US-20090234155-A1 Acid generating agent for chemically amplified resist compositions KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2009-09-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 ALDH1A1 4867/4885LMNA 2364/4885HSD17B10 4143/4885
US-20110034721-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same PFAS, DDAH1, STS ALDH1A1 421/4885LMNA 4230/4885HSD17B10 1624/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S ALDH1A1 706/4885LMNA 3442/4885HSD17B10 855/4885
US-20110200935-A1 PHOTORESIST COMPOSITION C1R, F12, C1S ALDH1A1 2022/4885LMNA 2664/4885HSD17B10 2060/4885
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode AFF1, AFF4, AFF2 ALDH1A1 256/4885LMNA 2676/4885HSD17B10 472/4885
US-20090234155-A1 Acid generating agent for chemically amplified resist compositions POLM, CBR1, PFAS ALDH1A1 346/4885LMNA 578/4885HSD17B10 1725/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X ALDH1A1 4540/4885LMNA 3894/4885HSD17B10 3732/4885
US-20110171576-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CLIC1, SLC10A6, APOL1 ALDH1A1 2416/4885LMNA 558/4885HSD17B10 2371/4885
US-20110200936-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME RER1, AFF1, FRG1 ALDH1A1 2966/4885LMNA 2778/4885HSD17B10 2146/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.