Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.37 |
| ▸ | LIPA | P38571 | 1/20 | 0.37 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.35 |
| ▸ | APOBEC3A | P31941 | 1/20 | 0.35 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 3/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.31 |
| ▸ | HMGCR | P04035 | 1/20 | 0.31 |
| ▸ | RECQL | P46063 | 1/20 | 0.31 |
| ▸ | ATM | Q13315 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | FKBP1A | P62942 | 3/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11941655 | 0.94 | HMGCR (0.33) | HSD11B1HMGCRFKBP1ARIPK1 | |
| SCHEMBL13427314 | 0.89 | CCR2 (0.31) | LIPAHMGCRFKBP1ARIPK1 | |
| SCHEMBL107703 | 0.88 | HMGCR (0.33) | KDM4EALDH1A1HMGCRFKBP1A | |
| SCHEMBL17370205 | 0.88 | HMGCR (0.30) | HMGCRFKBP1ARIPK1 | |
| SCHEMBL12040366 | 0.88 | HMGCR (0.30) | HMGCRFKBP1A | |
| SCHEMBL107891 | 0.87 | FKBP1A (0.37) | SMN1; SMN2HMGCRFKBP1ARIPK1 | |
| SCHEMBL15473009 | 0.86 | LIPA (0.32) | LIPACYP19A1 | |
| SCHEMBL18802879 | 0.86 | FKBP1A (0.36) | EPHX1HMGCRFKBP1ARIPK1 | |
| SCHEMBL18802861 | 0.86 | FKBP1A (0.36) | EPHX1HMGCRFKBP1ARIPK1 | |
| SCHEMBL106966 | 0.86 | FKBP1A (0.36) | EPHX1HMGCRFKBP1ARIPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9458144-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-9458144-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160152755-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-02 | — | — | US | disclosed |
| US-20160152755-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-02 | — | — | US | disclosed |
| US-9256127-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20150331314-A1 | PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-11-19 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150322027-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-9086624-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-21 | — | — | US | disclosed |
| US-20150160555-A1 | PATTERN FORMING METHOD, AND, METHOD FOR PRODUCING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-9046772-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046772-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-2 | HSD11B1 1628/4885LIPA 3750/4885EPHX1 1142/4885 |
| US-20150331314-A1 | PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | RER1, CROCC, RFT1 | HSD11B1 4273/4885LIPA 1506/4885EPHX1 10/4885 |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, H1-3, H1-2 | HSD11B1 1060/4885LIPA 2308/4885EPHX1 1418/4885 |
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | MMAB, PARG, DNMT3A | HSD11B1 2689/4885LIPA 1923/4885EPHX1 1639/4885 |
| US-20150322027-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ELL, RPS17, EEF1A1 | HSD11B1 460/4885LIPA 2868/4885EPHX1 1557/4885 |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-10 | HSD11B1 1327/4885LIPA 3276/4885EPHX1 1627/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.