Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.48 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.44 |
| ▸ | THRB | P10828 | 1/20 | 0.44 |
| ▸ | HTT | P42858 | 1/20 | 0.44 |
| ▸ | MAPT | P10636 | 1/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | NAAA | Q02083 | 2/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.31 |
| ▸ | SPHK2 | Q9NRA0 | 1/20 | 0.30 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Di(Hydroxyethyl)Ether SCHEMBL28236250 | 0.90 | TSHR (0.43) | TSHRMEN1KMT2ATHRBHTT | |
| Di(Hydroxyethyl)Ether SCHEMBL28309618 | 0.88 | TSHR (0.42) | TSHRMEN1KMT2ATHRBHTT | |
| Di(Hydroxyethyl)Ether SCHEMBL27905331 | 0.88 | TSHR (0.46) | TSHRMEN1KMT2ATHRBHTT | |
| 2-Ethoxyethanol SCHEMBL107093 | 0.86 | ALDH1A1 (0.56) | TSHRMEN1KMT2ATHRBHTT | |
| Di(Hydroxyethyl)Ether SCHEMBL27888464 | 0.83 | TSHR (0.50) | TSHRMEN1KMT2ATHRBHTT | |
| Propanol SCHEMBL107552 | 0.83 | NAAA (0.38) | TSHRALDH1A1NAAAEPHX1CYP1A2 | |
| SCHEMBL3623200 | 0.79 | TSHR (0.44) | TSHRMEN1KMT2ATHRBHTT | |
| 2-Methoxyethanol SCHEMBL107814 | 0.79 | LMNA (0.33) | TSHREPHX1 | |
| Triethylene Glycol SCHEMBL17421866 | 0.79 | MEN1 (0.47) | TSHRMEN1KMT2ATHRBHTT | |
| Alcohol SCHEMBL105384 | 0.79 | EPHX1 (0.43) | TSHRHTTALDH1A1NAAAEPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11934100-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-19 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-3796086-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-20090136869-A1 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090011372-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080290472-A1 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | TSHR 439/4885MEN1 719/4885KMT2A 1118/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | TSHR 439/4885MEN1 719/4885KMT2A 1118/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.