SCHEMBL15945501

SCHEMBL15945501

CC(C)c1cc(C(C)C)c(OCC(C)(C)O)c(C(C)C)c1

nearest known ligand 0.44

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.44
GABRB2 P47870 1/20 0.44
RXRA P19793 8/20 0.39
RARG P13631 6/20 0.39
PPARG P37231 6/20 0.39
FABP3 P05413 2/20 0.39
FABP4 P15090 2/20 0.39
FABP5 Q01469 1/20 0.38
RARB P10826 2/20 0.35
RXRB P28702 1/20 0.34
RXRG P48443 1/20 0.34
GLRA1 P23415 1/20 0.34
HMGCR P04035 1/20 0.33
SOAT2 O75908 1/20 0.33
MYC P01106 1/20 0.33
SOAT1 P35610 1/20 0.33
MAP2K3 P46734 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17931683 0.85 RXRA (0.38) GABRA1GABRB2RXRARARGPPARG
SCHEMBL10212529 0.77 RXRA (0.46) GABRA1GABRB2RXRARARGPPARG
SCHEMBL11109627 0.77 GABRA1 (0.43) GABRA1GABRB2RXRARARGPPARG
SCHEMBL15082948 0.72 FABP4 (0.51) GABRA1GABRB2FABP3FABP4FABP5
SCHEMBL8498111 0.71 FABP3 (0.52) RXRARARGPPARGFABP3FABP4
SCHEMBL4861540 0.71 RXRA (0.47) GABRA1GABRB2RXRARARGPPARG
SCHEMBL11887267 0.71 GABRA1 (0.42) GABRA1GABRB2RXRARARGPPARG
SCHEMBL13450837 0.70 RXRA (0.45) RXRAPPARGRXRB
SCHEMBL3267228 0.70 GABRA1 (0.50) GABRA1GABRB2RXRARARGPPARG
SCHEMBL12392187 0.69 RXRA (0.41) GABRA1GABRB2RXRARARGPPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-9904167-B2 Compound, active light sensitive or radiation sensitive resin composition, resist film using same, resist-coated mask blank, photomask, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-9632410-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2017-04-25 US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-20170003591-A1 MANUFACTURING METHOD FOR ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK COMPRISING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTO MASK, FORMING METHOD FOR PATTERN, MANUFACTURING METHOD FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-01-05 US disclosed
US-9423690-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-20160209746-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE AND NOVEL COMPOUND FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-20160147147-A1 PATTERN FORMING METHOD, ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-9291896-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-03-22 US disclosed
US-20160048075-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-02-18 US disclosed
US-20160026088-A1 METHOD FOR MANUFACTURING ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-28 US disclosed
US-20160018732-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, PHOTOMASK AND PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 US disclosed
US-20150309408-A1 NEGATIVE RESIST COMPOSITION, RESIST FILM USING SAME, PATTERN FORMING METHOD, AND MASK BLANK PROVIDED WITH RESIST FILM FUJIFILM CORPORATION (JP) 2015-10-29 US disclosed
US-20150168834-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2015-06-18 US disclosed
US-20150132687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-14 US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-20140342275-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-11-20 US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160209746-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE AND NOVEL COMPOUND ERCC1, RER1, ECPAS GABRA1 1720/4885GABRB2 3519/4885RXRA 16/4885
US-20160026088-A1 METHOD FOR MANUFACTURING ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE TFPI, POLI, F5 GABRA1 3724/4885GABRB2 3890/4885RXRA 3259/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.