SCHEMBL1607015

SCHEMBL1607015

COC(=O)c1cccc(S(=O)(=O)OCc2ccccc2)c1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LOXL2 Q9Y4K0 1/20 0.51
HPGD P15428 4/20 0.50
LMNA P02545 2/20 0.50
CYP4F2 P78329 2/20 0.50
CYP4A11 Q02928 2/20 0.50
CTSG P08311 1/20 0.50
CMA1 P23946 1/20 0.50
ALDH1A1 P00352 4/20 0.49
KDM4E B2RXH2 2/20 0.49
KMT2A Q03164 2/20 0.49
KAT6A Q92794 1/20 0.48
SLC7A5 Q01650 1/20 0.48
TSHR P16473 1/20 0.47
ACLY P53396 2/20 0.47
LOX P28300 1/20 0.47
MAPT P10636 1/20 0.47
GAA P10253 2/20 0.47
PKM P14618 1/20 0.47
HSD17B10 Q99714 1/20 0.47
MEN1 O00255 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8873021 0.86 CA12 (0.58) KAT6AACLYMAPT
SCHEMBL6114887 0.84 KDM4E (0.54) LOXL2HPGDCYP4F2CYP4A11CTSG
SCHEMBL3910534 0.84 ALDH1A1 (0.48) LOXL2HPGDLMNACYP4F2CYP4A11
SCHEMBL8874637 0.81 CA1 (0.54) LMNAALDH1A1KDM4EKMT2ATSHR
SCHEMBL6389243 0.77 LOXL2 (0.60) LOXL2CYP4F2CYP4A11ALDH1A1KDM4E
SCHEMBL8872453 0.77 CA12 (0.59) KMT2AACLYMAPT
SCHEMBL6667451 0.77 LOXL2 (0.64) LOXL2HPGDLMNACYP4F2CYP4A11
SCHEMBL27337757 0.77 KMT2A (0.69) LOXL2HPGDLMNACYP4F2CYP4A11
SCHEMBL27309667 0.77 KMT2A (0.53) LMNAALDH1A1KMT2ATSHRGAA
SCHEMBL10793373 0.77 ALDH1A1 (0.52) ALDH1A1KMT2AKAT6AGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US claimed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed