Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 3/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.39 |
| ▸ | MEN1 | O00255 | 4/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.38 |
| ▸ | PKM | P14618 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 4/20 | 0.37 |
| ▸ | HTT | P42858 | 4/20 | 0.37 |
| ▸ | TP53 | P04637 | 1/20 | 0.37 |
| ▸ | RORC | P51449 | 1/20 | 0.36 |
| ▸ | NT5E | P21589 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 2/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | FFAR4 | Q5NUL3 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3794759 | 0.89 | CCR2 (0.41) | ALDH1A1MAPTHTTLMNA | |
| SCHEMBL28038940 | 0.88 | CCR2 (0.41) | ALDH1A1MAPTHTTLMNA | |
| SCHEMBL1412682 | 0.88 | ALDH1A1 (0.46) | ALDH1A1MAPK1CYP1A2CYP3A4CYP2D6 | |
| SCHEMBL7902467 | 0.86 | KMT2A (0.38) | ALDH1A1CYP1A2CYP3A4CYP2C9MEN1 | |
| SCHEMBL7902462 | 0.86 | KMT2A (0.38) | ALDH1A1CYP1A2CYP3A4CYP2C9MEN1 | |
| SCHEMBL7792275 | 0.83 | ALDH1A1 (0.35) | ALDH1A1CYP1A2CYP3A4CYP2C19MEN1 | |
| SCHEMBL9550114 | 0.83 | ALDH1A1 (0.35) | ALDH1A1CYP1A2CYP3A4CYP2C19MEN1 | |
| SCHEMBL7792279 | 0.83 | ALDH1A1 (0.35) | ALDH1A1CYP1A2CYP3A4CYP2C19MEN1 | |
| SCHEMBL28022994 | 0.81 | ALDH1A1 (0.44) | ALDH1A1MAPK1CYP1A2CYP2C9CYP2C19 | |
| SCHEMBL9550118 | 0.80 | ALDH1A1 (0.41) | ALDH1A1CYP1A2CYP3A4CYP2D6CYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | claimed |
| CN-117501179-A | Method of using composition containing organic acid compound, lithographic composition containing organic acid compound, and method of manufacturing resist pattern | 默克专利有限公司 | 2024-02-02 | — | — | CN | disclosed |
| CN-116113885-A | Method for using composition containing carboxylic acid ester, lithographic composition containing carboxylic acid ester, and method for producing resist pattern | 默克专利有限公司 | 2023-05-12 | — | — | CN | disclosed |
| CN-110088072-B | Novel compound, semiconductor material, film using same, and method for producing semiconductor | 默克专利有限公司 | 2023-05-02 | — | — | CN | disclosed |
| CN-107357134-B | Composition and method for forming a material layer | 台湾积体电路制造股份有限公司 | 2021-12-10 | — | — | CN | disclosed |
| CN-104698774-B | semiconductor device process filter and method | 台湾积体电路制造股份有限公司 | 2019-10-25 | — | — | CN | disclosed |
| CN-106170737-B | Antireflective coating compositions and its method | AZ电子材料卢森堡有限公司 | 2019-08-06 | — | — | CN | disclosed |
| CN-110088072-A | Novel compound, semiconductor material, film using same, and method for manufacturing semiconductor | 默克专利有限公司 | 2019-08-02 | — | — | CN | disclosed |
| CN-107207674-A | Easy Wrecking property resin film formation composition and easy Wrecking property resin film | 日产化学工业株式会社 | 2017-09-26 | — | — | CN | disclosed |
| CN-106170737-A | Antireflective coating compositions and method thereof | AZ电子材料卢森堡有限公司 | 2016-11-30 | — | — | CN | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| CN-101583907-B | Solvent mixture for antireflective coating composition for photoresist | AZ ELECTRONIC MATERIALS USA | 2013-03-13 | — | — | CN | disclosed |
| CN-102245722-A | Switchable antireflective coatings | DOW CORNING | 2011-11-16 | — | — | CN | disclosed |
| CN-101027610-B | Antireflective composition for photoresists | AZ ELECTRONIC MATERIALS USA | 2011-08-03 | — | — | CN | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| CN-101583907-A | Solvent mixture for antireflective coating composition for photoresist | AZ ELECTRONIC MATERIALS USA (US) | 2009-11-18 | — | — | CN | disclosed |
| CN-101473004-A | Antireflective coating compositions comprising siloxane polymer | AZ ELECTRONIC MATERIALS USA (US) | 2009-07-01 | — | — | CN | disclosed |
| CN-101027610-A | Antireflective composition for photoresists | AZ ELECTRONIC MATERIALS USA (US) | 2007-08-29 | — | — | CN | disclosed |