SCHEMBL1607447

SCHEMBL1607447

CCc1ccc(S(=O)(=O)O)c(C)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR2 Q92731 2/20 0.41
POLB P06746 1/20 0.41
RECQL P46063 1/20 0.41
TRPA1 O75762 1/20 0.41
RAPGEF4 Q8WZA2 1/20 0.40
ALOX5 P09917 1/20 0.40
PTGS1 P23219 1/20 0.40
PTGS2 P35354 1/20 0.40
MEN1 O00255 1/20 0.39
KMT2A Q03164 1/20 0.39
PDE2A O00408 1/20 0.39
LMNA P02545 2/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
ALDH1A1 P00352 2/20 0.39
NPC1 O15118 1/20 0.39
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
RAB9A P51151 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
PKM P14618 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1309212 0.85 POLB (0.55) ESR2POLBRECQLTRPA1ALOX5
SCHEMBL1802409 0.85 ESR2 (0.41) ESR2POLBRECQLLMNAL3MBTL1
SCHEMBL1802408 0.85 ESR2 (0.41) ESR2POLBRECQLRAPGEF4MEN1
SCHEMBL4139997 0.84 L3MBTL1 (0.41) POLBTRPA1RAPGEF4ALOX5PTGS1
SCHEMBL1804054 0.83 ESR2 (0.40) ESR2POLBRECQLMEN1KMT2A
SCHEMBL1804051 0.83 ESR2 (0.43) ESR2POLBRECQLRAPGEF4MEN1
SCHEMBL17922517 0.82 L3MBTL1 (0.55) TRPA1RAPGEF4ALOX5PTGS1PTGS2
SCHEMBL7546576 0.82 TRPA1 (0.42) ESR2POLBRECQLTRPA1MEN1
SCHEMBL1809231 0.81 ESR2 (0.39) ESR2POLBRECQLRAPGEF4PTGS1
SCHEMBL1809232 0.81 CA2 (0.42) ESR2POLBRECQLALOX5LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
CN-102296460-A Method for enhancing carbon fiber 2011-12-28 CN disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed