SCHEMBL1617098

SCHEMBL1617098

Cc1ccc(S(=O)(=O)C(C)CC(=O)C2CCCCC2)cc1

nearest known ligand 0.49

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.46
TSHR P16473 3/20 0.45
HTT P42858 1/20 0.45
HSD17B10 Q99714 1/20 0.45
ADORA3 P0DMS8 1/20 0.43
ENPP3 O14638 2/20 0.43
ENPP1 P22413 2/20 0.43
ENPP2 Q13822 2/20 0.43
CYP3A4 P08684 1/20 0.42
MMP1 P03956 1/20 0.42
MMP2 P08253 1/20 0.42
MMP3 P08254 1/20 0.42
POLB P06746 1/20 0.41
KMT2A Q03164 1/20 0.41
TP53 P04637 1/20 0.41
LMNA P02545 1/20 0.41
EPHX2 P34913 1/20 0.41
GAA P10253 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28142448 0.95 ALDH1A1 (0.43) ALDH1A1TSHRHTTHSD17B10ADORA3
SCHEMBL28110645 0.86 USP30 (0.38) ALDH1A1TSHRHTTHSD17B10KMT2A
SCHEMBL28153593 0.78 EPHX2 (0.43) TSHRPOLBEPHX2
SCHEMBL31527899 0.76 KDM4E (0.51) ALDH1A1MMP1MMP2MMP3KMT2A
SCHEMBL6735797 0.76 ALDH1A1 (0.44) ALDH1A1TSHRHTTHSD17B10ADORA3
SCHEMBL6728666 0.76 ALDH1A1 (0.44) ALDH1A1TSHRHTTHSD17B10ADORA3
SCHEMBL9811493 0.75 ALDH1A1 (0.49) ALDH1A1TSHRHTTHSD17B10ADORA3
SCHEMBL6723639 0.75 ALDH1A1 (0.44) ALDH1A1TSHRHTTHSD17B10ADORA3
SCHEMBL29042226 0.74 ENPP3 (0.56) ALDH1A1TSHRADORA3ENPP3ENPP1
SCHEMBL19459601 0.74 GBA1 (0.42) ALDH1A1HTTCYP3A4MMP1MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 194 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2326744-B1 METAL COMPOSITIONS AND METHODS OF MAKING SAME PRYOG LLC (US) 2022-06-01 EP claimed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216790-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC., 2025-07-03 US disclosed
US-20250216782-A1 MASKING PROCESS USING SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216763-A1 ANTI-SPACER MASKING PROCESS USING RESIST LAYER WITH SOLUBILITY SHIFTING AGENT TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250218775-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC. 2025-07-03 US disclosed
WO-2025128334-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-19 WO disclosed
US-20020004178-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20010026904-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-04 US disclosed
US-20010010890-A1 Polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-02 US disclosed
EP-0749044-B1 Positive-working photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2000-09-06 EP disclosed
EP-0749046-B1 Positive-working photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2000-05-10 EP disclosed
US-5874195-A Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1999-02-23 US disclosed
US-5856058-A HALATION INHIBITOR WHICH IS AN ESTERIFICATION PRODUCT BETWEEN A SPECIFIED PHENOLIC COMPOUND AND A NAPHTHOQUINONE-1,2-DIAZIDE SULFONIC ACID. TOKYO OHKA KOGYO CO., LTD. (JP) 1999-01-05 US disclosed
US-5770343-A Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-23 US disclosed
EP-0749046-A1 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed
EP-0749044-A2 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1996-12-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 ALDH1A1 841/4885TSHR 2827/4885HTT 4860/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 ALDH1A1 1875/4885TSHR 1950/4885HTT 4300/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.