Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 6/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.32 |
| ▸ | USP2 | O75604 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.32 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.32 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | PGR | P06401 | 1/20 | 0.32 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.32 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.32 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.32 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.32 |
| ▸ | DRD1 | P21728 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12130476 | 0.87 | HMGCR (0.35) | HMGCR | |
| SCHEMBL13294442 | 0.86 | HMGCR (0.35) | HMGCR | |
| SCHEMBL13232094 | 0.85 | HMGCR (0.34) | HMGCR | |
| SCHEMBL12935532 | 0.84 | HMGCR (0.34) | HMGCR | |
| SCHEMBL47488 | 0.84 | HMGCR (0.34) | HMGCR | |
| SCHEMBL13324967 | 0.83 | HMGCR (0.33) | HMGCRALDH1A1 | |
| SCHEMBL12256541 | 0.83 | HMGCR (0.35) | HMGCR | |
| SCHEMBL14389170 | 0.82 | HMGCR (0.36) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13596137 | 0.81 | HMGCR (0.33) | HMGCR | |
| SCHEMBL13324972 | 0.80 | HMGCR (0.32) | HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20170176862-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9458343-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-20110045413-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-20110020755-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-01-27 | — | — | US | disclosed |
| US-7851140-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-12-14 | — | — | US | disclosed |
| US-20100239984-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100190106-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100167201-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20090042147-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20080318171-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-7291441-B2 | Positive resist composition and pattern forming method utilizing the same | FUJIFILM CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, INSR | HMGCR 3456/4885CYP3A4 3605/4885USP2 3883/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.