SCHEMBL16282571

SCHEMBL16282571

CCOC(C)Oc1c(C)cc(CNC(=O)C(C)CC)cc1C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 1/20 0.36
▸ MAPT P10636 1/20 0.36
▸ MAPK1 P28482 1/20 0.36
▸ CARM1 Q86X55 3/20 0.36
▸ PRMT6 Q96LA8 3/20 0.36
▸ PTGES O14684 1/20 0.35
▸ HSD17B10 Q99714 1/20 0.35
▸ HPGD P15428 2/20 0.34
▸ GAA P10253 2/20 0.34
▸ CYP3A4 P08684 3/20 0.33
▸ KDM4E B2RXH2 2/20 0.33
▸ KMT2A Q03164 2/20 0.33
▸ TSHR P16473 2/20 0.33
▸ MME P08473 1/20 0.33
▸ ERCC1 P07992 1/20 0.33
▸ ERCC4 Q92889 1/20 0.33
▸ ALOX15 P16050 1/20 0.33
▸ RAB9A P51151 1/20 0.33
▸ L3MBTL1 Q9Y468 1/20 0.33
▸ ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18195505 0.80 RIPK1 (0.47) CARM1PRMT6PTGESTSHR
SCHEMBL13212296 0.78 LMNA (0.43) LMNAMAPTMAPK1CARM1PRMT6
SCHEMBL14827285 0.74 LMNA (0.45) LMNAMAPTMAPK1CARM1PRMT6
SCHEMBL18470640 0.68 LMNA (0.37) LMNAHSD17B10HPGDGAAKMT2A
SCHEMBL15623780 0.68 MME (0.51) LMNAMAPTMAPK1PTGESHPGD
SCHEMBL8968668 0.68 LMNA (0.39) LMNAKDM4EKMT2AALDH1A1MEN1
SCHEMBL1516159 0.67 MME (0.65) LMNAMAPTMAPK1GAACYP3A4
SCHEMBL10031574 0.67 MME (0.65) LMNAMAPTMAPK1GAACYP3A4
SCHEMBL10283303 0.67 MME (0.65) LMNAMAPTMAPK1GAACYP3A4
SCHEMBL18477835 0.66 LMNA (0.34) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9880472-B2 Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same FUJIFILM CORPORATION (JP) 2018-01-30 — — US disclosed
US-9417528-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 — — US disclosed
US-20160147157-A1 PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2016-05-26 — — US disclosed
US-20150248056-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-03 — — US disclosed
US-20140363758-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-12-11 — — US disclosed
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