⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15216843 | 0.78 | — | — | |
| SCHEMBL26112672 | 0.76 | ALDH1A1 (0.35) | — | |
| SCHEMBL2759404 | 0.74 | ALDH1A1 (0.33) | — | |
| SCHEMBL6906998 | 0.74 | FDPS (0.36) | — | |
| SCHEMBL21135945 | 0.72 | ALDH1A1 (0.37) | — | |
| SCHEMBL1398392 | 0.72 | — | — | |
| SCHEMBL575399 | 0.72 | — | — | |
| SCHEMBL6771126 | 0.71 | — | — | |
| SCHEMBL501638 | 0.71 | — | — | |
| SCHEMBL8994482 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024043121-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR | 東京応化工業株式会社 | 2024-02-29 | — | — | WO | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| WO-2022265034-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUNDS, INTERMEDIATE, AND COMPOUNDS | 東京応化工業株式会社 | 2022-12-22 | — | — | WO | disclosed |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-8349533-B2 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-20100119970-A1 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-13 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |