SCHEMBL16417263

SCHEMBL16417263

C=C(C)C(=O)OCCOC(=O)C1CCN(S(=O)(=O)C(F)(F)S(=O)(=O)O)CC1

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.38
TSHR P16473 3/20 0.38
MAPT P10636 3/20 0.38
TP53 P04637 2/20 0.38
HSD17B10 Q99714 1/20 0.38
KMT2A Q03164 4/20 0.36
MEN1 O00255 2/20 0.36
POLB P06746 2/20 0.36
PKM P14618 5/20 0.35
ATM Q13315 1/20 0.35
THRB P10828 1/20 0.35
LMNA P02545 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
HTT P42858 2/20 0.34
GAA P10253 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16417265 0.86 TP53 (0.37) ALDH1A1TSHRMAPTTP53HSD17B10
SCHEMBL16417484 0.86 ALDH1A1 (0.35) ALDH1A1TSHRMAPTTP53HSD17B10
SCHEMBL12399482 0.84 TSHR (0.35) ALDH1A1TSHRMAPTTP53HSD17B10
SCHEMBL2785959 0.75 THRB (0.53) ALDH1A1TSHRMAPTPOLBTHRB
SCHEMBL13464399 0.70 THRB (0.33) THRB
SCHEMBL1152044 0.70 THRB (0.47) ALDH1A1TSHRMAPTPOLBTHRB
SCHEMBL24511674 0.69 THRB (0.44) ALDH1A1TSHRMAPTTP53HSD17B10
SCHEMBL21868789 0.69 THRB (0.44) ALDH1A1TSHRMAPTPOLBTHRB
SCHEMBL13446309 0.69 GAA (0.35) ALDH1A1TSHRMAPTHSD17B10KMT2A
SCHEMBL10040737 0.69 THRB (0.53) ALDH1A1TSHRMAPTPOLBTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 US disclosed