SCHEMBL16737003

SCHEMBL16737003

C=C(C)C(=O)OC1CC2CC1C1C(=O)OC(=O)C21

nearest known ligand 0.34

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
GPX4 P36969 1/20 0.34
ATM Q13315 2/20 0.34
KDM4E B2RXH2 1/20 0.34
NPC1 O15118 1/20 0.34
POLB P06746 1/20 0.34
MAPT P10636 1/20 0.34
PKM P14618 1/20 0.34
HTT P42858 1/20 0.34
RECQL P46063 1/20 0.34
RAB9A P51151 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
KMT2A Q03164 2/20 0.32
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14838639 0.86 ALDH1A1 (0.34) ALDH1A1
SCHEMBL9531867 0.85 CHRM2 (0.33) KMT2A
SCHEMBL13559239 0.84 GPX4 (0.31) GPX4ATMKDM4ENPC1POLB
SCHEMBL6104114 0.82
SCHEMBL75010 0.82 GPX4 (0.34) GPX4ATMKDM4ENPC1POLB
SCHEMBL18400928 0.82 GPX4 (0.34) GPX4ATMKDM4ENPC1POLB
SCHEMBL3803250 0.81 GPX4 (0.33) GPX4ATMKDM4ENPC1POLB
SCHEMBL304319 0.81 GPX4 (0.33) GPX4ATMKDM4ENPC1POLB
SCHEMBL3809880 0.80 GPX4 (0.33) GPX4ATMKDM4ENPC1POLB
SCHEMBL13133188 0.78 KMT2A (0.33) GPX4ATMKDM4ENPC1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9366963-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-9366963-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-9316915-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-9316915-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-20150147697-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-28 US disclosed
US-20150147696-A1 METHOD FOR PRODUCING POLYMER COMPOUND, POLYMER COMPOUND, AND PHOTORESIST RESIN COMPOSITION DAICEL CORPORATION (JP) 2015-05-28 US disclosed
US-20150147698-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-28 US disclosed
US-20150147697-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-28 US disclosed
US-20150147698-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-28 US disclosed