Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPX4 | P36969 | 1/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18400928 | 1.00 | GPX4 (0.34) | GPX4KDM4ENPC1POLBMAPT | |
| SCHEMBL304319 | 0.90 | GPX4 (0.33) | GPX4KDM4ENPC1POLBMAPT | |
| SCHEMBL75164 | 0.89 | GPX4 (0.33) | GPX4KDM4ENPC1POLBMAPT | |
| SCHEMBL3803250 | 0.88 | GPX4 (0.33) | GPX4KDM4ENPC1POLBMAPT | |
| SCHEMBL10061292 | 0.87 | LMNA (0.38) | LMNACYP3A4 | |
| SCHEMBL10027365 | 0.86 | ALDH1A1 (0.34) | ALDH1A1 | |
| SCHEMBL4690291 | 0.85 | GPX4 (0.32) | GPX4KDM4ENPC1POLBMAPT | |
| SCHEMBL10027368 | 0.84 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL1217043 | 0.84 | — | — | |
| SCHEMBL11963931 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 644 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9840568-B2 | Polymer and method for producing same | MITSUBISHI CHEMICAL CORPORATION (JP) | 2017-12-12 | — | — | US | claimed |
| US-9527938-B2 | Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate | MITSUBISHI RAYON CO., LTD. (JP) | 2016-12-27 | — | — | US | claimed |
| US-20150099230-A1 | COPOLYMER FOR LITHOGRAPHY AND METHOD OF MANUFACTURING THE SAME, RESIST COMPOSITION, AND METHOD OF MANUFACTURING SUBSTRATE | MITSUBISHI RAYON CO., LTD. (JP) | 2015-04-09 | — | — | US | claimed |
| US-12384863-B2 | Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth)acrylic ester and production method therefor | MITSUBISHI CHEMICAL CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| CN-113614073-B | Polymer, resist composition, method for producing patterned substrate, and method for producing (meth) acrylate | 三菱化学株式会社 | 2024-09-24 | — | — | CN | disclosed |
| US-20240092956-A1 | Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor | MITSUBISHI CHEMICAL CORPORATION (JP) | 2024-03-21 | — | — | US | disclosed |
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11845822-B2 | Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth) acrylic ester and production method therefor | MITSUBISHI CHEMICAL CORPORATION (JP) | 2023-12-19 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-20050238990-A1 | Photoresist resin and photoresist resin composition | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2005-10-27 | — | — | US | disclosed |
| EP-1584634-A1 | POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST | Daicel Chemical Industries, Ltd. (JP) | 2005-10-12 | — | — | EP | disclosed |
| US-20050113538-A1 | (Meth)acrylate, raw material alcohol for the (meth)acrylate, method of producing the (meth)acrylate and the alcohol, polymer produced by polymerizing the (meth)acrylate, chemically amplified resist composition, and method of the formation of a pattern | MITSUBISHI RAYON CO.,LTD. (JP) | 2005-05-26 | — | — | US | disclosed |
| US-20050014087-A1 | Photoresist polymeric compound and photoresist resin composition | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| WO-2004102272-A2 | PHOTORESIST COMPOSITION FOR DEEP UV AND IMAGING PROCESS THEREOF | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-11-25 | — | — | WO | disclosed |
| US-20040063882-A1 | (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns | MITSUBISHI CHEMICAL CORPORATION (JP) | 2004-04-01 | — | — | US | disclosed |
| EP-1354897-A1 | POLYMER FOR PHOTORESIST AND RESIN COMPOSITIONS THEREFOR | Daicel Chemical Industries, Ltd. (JP) | 2003-10-22 | — | — | EP | disclosed |
| EP-1352904-A1 | (METH)ACRYLATE ESTERS, STARTING ALCOHOLS FOR THE PREPARATION THEREOF, PROCESSES FOR PREPARING BOTH, POLYMERS OF THE ESTERS, CHEMICALLY AMPLIFIABLE RESIST COMPOSITIONS, AND METHOD FOR FORMING PATTERNS | Mitsubishi Rayon Co., Ltd. (JP) | 2003-10-15 | — | — | EP | disclosed |
| US-20030148210-A1 | Polymer for photoresist and resin compositions therefor | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2003-08-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20030148210-A1 | Polymer for photoresist and resin compositions therefor | LCP1, DOT1L, PRMT1 | GPX4 852/4885KDM4E 143/4885NPC1 4338/4885 |
| US-20240092956-A1 | Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor | ASS1, SETDB1, MAT1A | GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885 |
| US-11845822-B2 | Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth) acrylic ester and production method therefor | ASS1, SETDB1, MAT1A | GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885 |
| US-20040063882-A1 | (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns | ADH1A, ADH1C, ADH5 | GPX4 2271/4885KDM4E 698/4885NPC1 4812/4885 |
| US-12384863-B2 | Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth)acrylic ester and production method therefor | ASS1, SETDB1, MAT1A | GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.