SCHEMBL304319

SCHEMBL304319

C=C(C)C(=O)OC1CC2CC1C1C(=O)OCC21

nearest known ligand 0.33

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
GPX4 P36969 1/20 0.33
KDM4E B2RXH2 1/20 0.33
NPC1 O15118 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
PKM P14618 1/20 0.33
HTT P42858 1/20 0.33
RECQL P46063 1/20 0.33
RAB9A P51151 1/20 0.33
ATM Q13315 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
ALDH1A1 P00352 1/20 0.32
LMNA P02545 1/20 0.31
CYP3A4 P08684 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL75010 0.90 GPX4 (0.34) GPX4KDM4ENPC1POLBMAPT
SCHEMBL18400928 0.90 GPX4 (0.34) GPX4KDM4ENPC1POLBMAPT
SCHEMBL4690291 0.90 GPX4 (0.32) GPX4KDM4ENPC1POLBMAPT
SCHEMBL3809880 0.88 GPX4 (0.33) GPX4KDM4ENPC1POLBMAPT
SCHEMBL6467663 0.87 ALDH1A1 (0.35) ALDH1A1
SCHEMBL16858288 0.86 GPX4 (0.33) GPX4KDM4ENPC1POLBMAPT
SCHEMBL12156893 0.86 LMNA (0.38) LMNACYP3A4
SCHEMBL10027358 0.86
SCHEMBL75164 0.85 GPX4 (0.33) GPX4KDM4ENPC1POLBMAPT
SCHEMBL6104969 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 156 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9840568-B2 Polymer and method for producing same MITSUBISHI CHEMICAL CORPORATION (JP) 2017-12-12 US claimed
US-9527938-B2 Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate MITSUBISHI RAYON CO., LTD. (JP) 2016-12-27 US claimed
US-20150099230-A1 COPOLYMER FOR LITHOGRAPHY AND METHOD OF MANUFACTURING THE SAME, RESIST COMPOSITION, AND METHOD OF MANUFACTURING SUBSTRATE MITSUBISHI RAYON CO., LTD. (JP) 2015-04-09 US claimed
US-12384863-B2 Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth)acrylic ester and production method therefor MITSUBISHI CHEMICAL CORPORATION (JP) 2025-08-12 US disclosed
US-20240092956-A1 Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor MITSUBISHI CHEMICAL CORPORATION (JP) 2024-03-21 US disclosed
US-11845822-B2 Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth) acrylic ester and production method therefor MITSUBISHI CHEMICAL CORPORATION (JP) 2023-12-19 US disclosed
WO-2023095563-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-01 WO disclosed
US-20220213243-A1 Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor MITSUBISHI CHEMICAL CORPORATION (JP) 2022-07-07 US disclosed
US-10921711-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2021-02-16 US disclosed
US-20200377713-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2020-12-03 US disclosed
US-20200089116-A1 Fluorine-Containing Monomer, Fluorine-Containing Polymer, Pattern Forming Composition Using Same, and Pattern Forming Method of Same CENTRAL GLASS COMPANY, LIMITED (JP) 2020-03-19 US disclosed
EP-1584634-A1 POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST Daicel Chemical Industries, Ltd. (JP) 2005-10-12 EP disclosed
US-20050113538-A1 (Meth)acrylate, raw material alcohol for the (meth)acrylate, method of producing the (meth)acrylate and the alcohol, polymer produced by polymerizing the (meth)acrylate, chemically amplified resist composition, and method of the formation of a pattern MITSUBISHI RAYON CO.,LTD. (JP) 2005-05-26 US disclosed
US-20050014087-A1 Photoresist polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-01-20 US disclosed
US-20040248031-A1 5-Methylene-1,3-dioxolan-4-one derivatives, process for their production, polymers of the derivatives, resist compositions, and pattern formation process MITSUBISHI CHEMICAL CORPORATION (JP) 2004-12-09 US disclosed
EP-1447403-A1 5-METHYLENE-1,3-DIOXOLAN-4-ONE DERIVATIVES, PROCESS FOR THEIR PRODUCTION, POLYMERS OF THE DERIVATIVES, RESIST COMPOSITIONS, AND PATTERN FORMATION PROCESS Mitsubishi Rayon Co., Ltd. (JP) 2004-08-18 EP disclosed
US-20040063882-A1 (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns MITSUBISHI CHEMICAL CORPORATION (JP) 2004-04-01 US disclosed
EP-1354897-A1 POLYMER FOR PHOTORESIST AND RESIN COMPOSITIONS THEREFOR Daicel Chemical Industries, Ltd. (JP) 2003-10-22 EP disclosed
EP-1352904-A1 (METH)ACRYLATE ESTERS, STARTING ALCOHOLS FOR THE PREPARATION THEREOF, PROCESSES FOR PREPARING BOTH, POLYMERS OF THE ESTERS, CHEMICALLY AMPLIFIABLE RESIST COMPOSITIONS, AND METHOD FOR FORMING PATTERNS Mitsubishi Rayon Co., Ltd. (JP) 2003-10-15 EP disclosed
US-20030148210-A1 Polymer for photoresist and resin compositions therefor DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2003-08-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030148210-A1 Polymer for photoresist and resin compositions therefor LCP1, DOT1L, PRMT1 GPX4 852/4885KDM4E 143/4885NPC1 4338/4885
US-20220213243-A1 Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor ASS1, SETDB1, MAT1A GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885
US-20240092956-A1 Polymer, Resist Composition, Method for Manufacturing Substrate Having Pattern Formed Therein, and (Meth)Acrylic Ester and Production Method Therefor ASS1, SETDB1, MAT1A GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885
US-11845822-B2 Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth) acrylic ester and production method therefor ASS1, SETDB1, MAT1A GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885
US-20040063882-A1 (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns ADH1A, ADH1C, ADH5 GPX4 2271/4885KDM4E 698/4885NPC1 4812/4885
US-12384863-B2 Polymer, resist composition, method for manufacturing substrate having pattern formed therein, and (meth)acrylic ester and production method therefor ASS1, SETDB1, MAT1A GPX4 3063/4885KDM4E 947/4885NPC1 3829/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.