SCHEMBL17138385

SCHEMBL17138385

C=C(C)C(=O)OCCCC(CCCOC(=O)C(=C)C)(CCCOC(=O)C(=C)C)O[Zr]

nearest known ligand 0.53

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.53
THRB P10828 1/20 0.46
POLB P06746 1/20 0.41
APEX1 P27695 1/20 0.41
HTT P42858 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
ALDH1A1 P00352 3/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL845751 0.82 TSHR (0.53) TSHRTHRBPOLBAPEX1HTT
SCHEMBL1108012 0.79 TSHR (0.58) TSHRTHRBPOLBAPEX1HTT
SCHEMBL19019805 0.79 TSHR (0.54) TSHRTHRBPOLBAPEX1HTT
SCHEMBL1162378 0.79 TSHR (0.53) TSHRTHRBPOLBAPEX1HTT
SCHEMBL1501544 0.78 TSHR (0.53) TSHRTHRBPOLBAPEX1HTT
SCHEMBL5144090 0.78 TSHR (0.79) TSHRTHRBPOLBAPEX1HTT
SCHEMBL182045 0.78 TSHR (0.72) TSHRTHRBPOLBAPEX1HTT
SCHEMBL25426 0.78 TSHR (0.79) TSHRTHRBPOLBAPEX1HTT
SCHEMBL9610669 0.78 TSHR (0.56) TSHRTHRBPOLBAPEX1HTT
Fluoride SCHEMBL28254640 0.78 TSHR (0.56) TSHRTHRBPOLBAPEX1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260133485-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2026-05-14 US disclosed
US-20260093180-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION JSR CORPORATION (JP) 2026-04-02 US disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250368837-A1 Composition For Forming Metal-Containing Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
US-20250362595-A1 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-11-27 US disclosed
EP-4653955-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-11-26 EP disclosed
EP-4606882-A1 CLEANING SOLUTION, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR FORMING METAL-CONTAINING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-27 EP disclosed
EP-4579348-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-07-02 EP disclosed
EP-4579346-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-02 EP disclosed
EP-4579347-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-02 EP disclosed
US-20170362412-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
EP-3244262-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD JSR Corporation (JP) 2017-11-15 EP disclosed
US-9809489-B2 Composition for forming a conductive film, a conductive film, a method for producing a plating film, a plating film, and an electronic device JSR CORPORATION (JP) 2017-11-07 US disclosed
US-20170299962-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-10-19 US disclosed
EP-3229075-A1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR Corporation (JP) 2017-10-11 EP disclosed
US-20170269476-A1 PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-09-21 US disclosed
US-20170184960-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20170184961-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20160081189-A1 COMPOSITION FOR FORMING A CONDUCTIVE FILM, A CONDUCTIVE FILM, A METHOD FOR PRODUCING A PLATING FILM, A PLATING FILM, AND AN ELECTRONIC DEVICE JSR CORPORATION (JP) 2016-03-17 US disclosed
US-20150284539-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-10-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093180-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION SMC4, TYR, SMC2 TSHR 1574/4885THRB 2783/4885POLB 3396/4885
US-20260133485-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION TWF2, TERF2, TPR TSHR 1316/4885THRB 3259/4885POLB 2791/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.