SCHEMBL17138404

SCHEMBL17138404

C=CC(=O)OCCCC(CCCOC(=O)C=C)(CCCOC(=O)C=C)O[Zr]

nearest known ligand 0.59

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.59
ALDH1A1 P00352 4/20 0.59
CYP3A4 P08684 2/20 0.59
HPGD P15428 1/20 0.53
TP53 P04637 3/20 0.48
HIF1A Q16665 3/20 0.48
HSD17B10 Q99714 1/20 0.48
THRB P10828 2/20 0.41
MAPK1 P28482 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
ATM Q13315 1/20 0.34
HCAR2 Q8TDS4 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5160299 0.81 TSHR (0.59) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL17138383 0.79 ATM (0.44) TSHRALDH1A1CYP3A4HPGDSMN1; SMN2
SCHEMBL244114 0.77 TSHR (0.95) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL321925 0.77 TSHR (0.85) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL23494302 0.77 TSHR (0.63) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL8373745 0.77 TSHR (0.63) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL8965481 0.76 TSHR (0.57) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL1501338 0.76 TSHR (0.56) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL31441003 0.76 TSHR (0.61) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL26661210 0.76 TSHR (0.61) TSHRALDH1A1CYP3A4HPGDTP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260133485-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2026-05-14 US disclosed
US-20260093180-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION JSR CORPORATION (JP) 2026-04-02 US disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250368837-A1 Composition For Forming Metal-Containing Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
US-20250362595-A1 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-11-27 US disclosed
EP-4653955-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-11-26 EP disclosed
EP-4606882-A1 CLEANING SOLUTION, METHOD FOR CLEANING SUBSTRATE, AND METHOD FOR FORMING METAL-CONTAINING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-27 EP disclosed
EP-4579346-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-02 EP disclosed
EP-4579347-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-02 EP disclosed
EP-4579348-A2 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-07-02 EP disclosed
US-20170362412-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-12-21 US disclosed
EP-3244262-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD JSR Corporation (JP) 2017-11-15 EP disclosed
US-9809489-B2 Composition for forming a conductive film, a conductive film, a method for producing a plating film, a plating film, and an electronic device JSR CORPORATION (JP) 2017-11-07 US disclosed
US-20170299962-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-10-19 US disclosed
EP-3229075-A1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR Corporation (JP) 2017-10-11 EP disclosed
US-20170269476-A1 PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-09-21 US disclosed
US-20170184960-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20170184961-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-06-29 US disclosed
US-20160081189-A1 COMPOSITION FOR FORMING A CONDUCTIVE FILM, A CONDUCTIVE FILM, A METHOD FOR PRODUCING A PLATING FILM, A PLATING FILM, AND AN ELECTRONIC DEVICE JSR CORPORATION (JP) 2016-03-17 US disclosed
US-20150284539-A1 COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-10-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093180-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FILM FORMATION SMC4, TYR, SMC2 TSHR 1574/4885ALDH1A1 2634/4885CYP3A4 252/4885
US-20260133485-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION TWF2, TERF2, TPR TSHR 1316/4885ALDH1A1 3632/4885CYP3A4 1752/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.