Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.47 |
| ▸ | DHFR | P00374 | 1/20 | 0.45 |
| ▸ | TP53 | P04637 | 1/20 | 0.43 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.43 |
| ▸ | MGLL | Q99685 | 3/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | GLA | P06280 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22357191 | 1.00 | ALDH1A1 (0.47) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL22357193 | 0.95 | ALDH1A1 (0.46) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL27669935 | 0.94 | ALDH1A1 (0.42) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL1646377 | 0.93 | ALDH1A1 (0.47) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL157854 | 0.87 | DHFR (0.48) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL1376714 | 0.85 | DHFR (0.43) | ALDH1A1DHFRMGLL | |
| SCHEMBL2493818 | 0.83 | DHFR (0.42) | ALDH1A1DHFRMGLL | |
| SCHEMBL1714954 | 0.83 | ALDH1A1 (0.45) | ALDH1A1DHFRTP53CYP3A4MGLL | |
| SCHEMBL1715642 | 0.82 | DHFR (0.43) | ALDH1A1DHFRTP53MGLLMAPK1 | |
| SCHEMBL1714352 | 0.82 | DHFR (0.45) | ALDH1A1DHFRTP53CYP3A4MGLL |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122095316-A | Composition for forming resist underlayer film | — | 2026-05-26 | — | — | CN | disclosed |
| WO-2025095106-A1 | RESIST UNDERLAYER FILM FORMATION COMPOSITION | 日産化学株式会社 | 2025-05-08 | — | — | WO | disclosed |
| CN-114746468-B | Method for producing polymer | 日产化学株式会社 | 2024-09-13 | — | — | CN | disclosed |
| US-20230103242-A1 | METHOD FOR PRODUCING POLYMER | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-30 | — | — | US | disclosed |
| US-20230029997-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2023-02-02 | — | — | US | disclosed |
| US-20220404706-A1 | CHEMICAL-RESISTANT POLYVALENT CARBOXYLIC ACID-CONTAINING PROTECTIVE FILM | NISSAN CHEMICAL CORPORATION (JP) | 2022-12-22 | — | — | US | disclosed |
| CN-114761876-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2022-07-15 | — | — | CN | disclosed |
| CN-114746468-A | Method for producing polymer | 日产化学株式会社 | 2022-07-12 | — | — | CN | disclosed |
| US-20220153920-A1 | METHOD FOR PRODUCING POLYMER | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20220145119-A1 | CHEMICAL SOLUTION-RESISTANT PROTECTIVE FILM FORMING COMPOSITION CONTAINING POLYMERIZATION PRODUCT HAVING DIOL STRUCTURE AT TERMINAL THEREOF | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-12 | — | — | US | disclosed |
| US-20100022089-A1 | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-01-28 | — | — | US | disclosed |
| US-7632626-B2 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-12-15 | — | — | US | disclosed |
| US-7595144-B2 | Sulfonate-containing anti-reflective coating forming composition for lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-09-29 | — | — | US | disclosed |
| CN-101523292-A | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSAN CHEMICAL IND LTD (JP) | 2009-09-02 | — | — | CN | disclosed |
| EP-2085823-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | Nissan Chemical Industries, Ltd. (JP) | 2009-08-05 | — | — | EP | disclosed |
| US-20080268379-A1 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080038678-A1 | Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| EP-1876495-A1 | COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2008-01-09 | — | — | EP | disclosed |
| US-20080003524-A1 | Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-01-03 | — | — | US | disclosed |
| EP-1813987-A1 | SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2007-08-01 | — | — | EP | disclosed |