SCHEMBL1715642

SCHEMBL1715642

Cc1ccc(C(=O)OCC2CO2)c(C(=O)OCC2CO2)c1

nearest known ligand 0.48

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
DHFR P00374 1/20 0.43
RAB9A P51151 3/20 0.42
NPC1 O15118 2/20 0.42
ALDH1A1 P00352 1/20 0.41
MGLL Q99685 3/20 0.40
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
TSHR P16473 2/20 0.39
MAPK1 P28482 2/20 0.39
TP53 P04637 1/20 0.39
MAPT P10636 1/20 0.39
ALOX15 P16050 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27689055 0.93 CSNK2A1 (0.41) DHFRRAB9ANPC1ALDH1A1MGLL
SCHEMBL1646377 0.85 ALDH1A1 (0.47) DHFRALDH1A1MGLLMAPK1TP53
SCHEMBL157854 0.84 DHFR (0.48) DHFRALDH1A1MGLLTSHRMAPK1
SCHEMBL155724 0.83 DHFR (0.44) DHFRNPC1ALDH1A1MGLLKMT2A
SCHEMBL1726192 0.83 SERPINE1 (0.46) DHFRALDH1A1MGLLMEN1KMT2A
SCHEMBL21981246 0.83 CA12 (0.47) RAB9ANPC1ALDH1A1MEN1KMT2A
SCHEMBL1714542 0.82 ALDH1A1 (0.47) DHFRALDH1A1MGLLMAPK1TP53
SCHEMBL22357191 0.82 ALDH1A1 (0.47) DHFRALDH1A1MGLLMAPK1TP53
SCHEMBL1376714 0.82 DHFR (0.43) DHFRNPC1ALDH1A1MGLLKMT2A
SCHEMBL1644710 0.82 DHFR (0.43) DHFRALDH1A1MGLLMAPK1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
CN-114761876-A Composition for forming resist underlayer film 日产化学株式会社 2022-07-15 CN disclosed
CN-114746468-A Method for producing polymer 日产化学株式会社 2022-07-12 CN disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
US-20160159993-A1 EPOXY RESIN COMPOSITION, FIBER-REINFORCED COMPOSITE MATERIAL, AND METHOD FOR PRODUCING THE SAME TORAY INDUSTRIES, INC. (JP) 2016-06-09 US disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
US-7595144-B2 Sulfonate-containing anti-reflective coating forming composition for lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-09-29 US disclosed
CN-101523292-A Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1876495-A1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2008-01-09 EP disclosed
US-20080003524-A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-01-03 US disclosed
EP-1813987-A1 SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2007-08-01 EP disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed