SCHEMBL1715028

SCHEMBL1715028

O=c1[nH]c(=O)n(CC2CO2)c(=O)[nH]1.c1ccc(CCC2CO2)cc1

nearest known ligand 0.44

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.44
MEN1 O00255 1/20 0.44
DHFR P00374 1/20 0.43
DRD4 P21917 4/20 0.42
CYP3A4 P08684 2/20 0.40
SLC6A2 P23975 1/20 0.40
SLC6A4 P31645 1/20 0.40
SLC6A3 Q01959 1/20 0.40
TP53 P04637 1/20 0.40
HBB P68871 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
CYP1A2 P05177 1/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2C9 P11712 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
DRD3 P35462 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16880352 0.81 SMN1; SMN2 (0.58) KMT2AMEN1DHFRCYP3A4TP53
SCHEMBL464610 0.81 SMN1; SMN2 (0.58) KMT2AMEN1DHFRCYP3A4TP53
SCHEMBL24137898 0.79 MEN1 (0.62) KMT2AMEN1DRD4CYP3A4SLC6A2
SCHEMBL52143 0.79 MEN1 (0.62) KMT2AMEN1DRD4CYP3A4SLC6A2
SCHEMBL2077308 0.79 MEN1 (0.62) KMT2AMEN1DRD4CYP3A4SLC6A2
Ammonia Solution, Strong SCHEMBL28002354 0.78 MEN1 (0.61) KMT2AMEN1DRD4CYP3A4SLC6A2
SCHEMBL2340342 0.77 TP53 (0.46) DHFRTP53HBBSMN1; SMN2
SCHEMBL1714962 0.75 ALDH1A1 (0.46) DHFRTP53HBBSMN1; SMN2CYP1A2
SCHEMBL23466918 0.74 TP53 (0.42) DHFRTP53HBBSMN1; SMN2
SCHEMBL123343 0.74 TP53 (0.42) DHFRTP53HBBSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1876495-B1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2011-07-20 EP disclosed
US-7846638-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-12-07 US disclosed
EP-1560070-B1 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2009-12-30 EP disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
US-7425399-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-09-16 US disclosed
US-20080206680-A1 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-08-28 US disclosed
EP-1876495-A1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2008-01-09 EP disclosed
US-20060290429-A1 Composition form forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-28 US disclosed
EP-1560070-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2005-08-03 EP disclosed