SCHEMBL1715224

SCHEMBL1715224

CCC(CCCC(=O)OCC1CO1)C(=O)OCC1CO1

nearest known ligand 0.53

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.44
POLB P06746 1/20 0.44
MGLL Q99685 3/20 0.44
ALDH1A1 P00352 1/20 0.41
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1714911 0.91 ALDH1A1 (0.42) LMNAPOLBMGLLALDH1A1
SCHEMBL93242 0.86 CA2 (0.54) ALDH1A1CA1CA2
SCHEMBL600502 0.84 CA2 (0.47) ALDH1A1CA1CA2
SCHEMBL14976732 0.82 ALDH1A1 (0.52) MGLLALDH1A1
SCHEMBL1715810 0.82 LMNA (0.46) LMNAPOLBMGLLALDH1A1
SCHEMBL17718479 0.81 LMNA (0.49) LMNAPOLBMGLLALDH1A1
SCHEMBL20760836 0.81 ALDH1A1 (0.45) LMNAPOLBMGLLALDH1A1
SCHEMBL1714281 0.81 ALDH1A1 (0.41) LMNAPOLBMGLLALDH1A1
SCHEMBL11287718 0.79 CYP3A4 (0.49) LMNAPOLBMGLLALDH1A1
SCHEMBL20173666 0.79 CYP3A4 (0.49) LMNAPOLBMGLLALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101523292-B Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD 2013-04-10 CN disclosed
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
EP-1876495-B1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2011-07-20 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
CN-101523292-A Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
EP-1876495-A1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2008-01-09 EP disclosed