Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CHRM2 | P08172 | 1/20 | 0.43 |
| ▸ | NFKB1 | P19838 | 3/20 | 0.41 |
| ▸ | CA12 | O43570 | 2/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.39 |
| ▸ | CA2 | P00918 | 2/20 | 0.39 |
| ▸ | CA3 | P07451 | 2/20 | 0.39 |
| ▸ | CA4 | P22748 | 2/20 | 0.39 |
| ▸ | CA6 | P23280 | 2/20 | 0.39 |
| ▸ | CA5A | P35218 | 2/20 | 0.39 |
| ▸ | CA7 | P43166 | 2/20 | 0.39 |
| ▸ | CA9 | Q16790 | 2/20 | 0.39 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.39 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | BLM | P54132 | 2/20 | 0.39 |
| ▸ | DNM1 | Q05193 | 1/20 | 0.39 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | LCK | P06239 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1720701 | 0.91 | — | — | |
| SCHEMBL11470566 | 0.85 | NFKB1 (0.35) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL1720051 | 0.84 | EYA2 (0.30) | — | |
| SCHEMBL11880156 | 0.81 | ALDH1A1 (0.33) | TSHRALDH1A1 | |
| SCHEMBL63987 | 0.81 | NFKB1 (0.54) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL64537 | 0.80 | CHRM2 (0.42) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL63378 | 0.80 | CHRM2 (0.42) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL11041212 | 0.80 | CHRM2 (0.42) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL29198096 | 0.80 | CHRM2 (0.42) | CHRM2NFKB1CA12CA1CA2 | |
| SCHEMBL3077794 | 0.80 | CHRM2 (0.42) | CHRM2NFKB1CA12CA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | claimed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | claimed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | claimed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | claimed |
| CN-110655731-B | Polyvinyl chloride composition for removing formaldehyde and product for removing formaldehyde | 3M创新有限公司 | 2022-03-04 | — | — | CN | disclosed |
| CN-113082931-A | Composition for removing aldehydes and benzene series, application thereof and modified activated carbon | 3M创新有限公司 | 2021-07-09 | — | — | CN | disclosed |
| CN-110655731-A | Polyvinyl chloride composition for removing formaldehyde and product for removing formaldehyde | 3M创新有限公司 | 2020-01-07 | — | — | CN | disclosed |
| WO-2015095503-A1 | ENVIRONMENTALLY ACCEPTABLE MULTIFUNCTIONAL ADDITIVE | SCHLUMBERGER CANADA LIMITED (CA) | 2015-06-25 | — | — | WO | disclosed |
| US-20150175877-A1 | ENVIRONMENTALLY ACCEPTABLE MULTIFUNCTIONAL ADDITIVE | SCHLUMBERGER TECHNOLOGY CORPORATION | 2015-06-25 | — | — | US | disclosed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |