SCHEMBL17323529

SCHEMBL17323529

O=C(O)c1c(C2CCCC2)cccc1C1CCCC1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMO O15229 1/20 0.49
▸ PTGDR2 Q9Y5Y4 7/20 0.47
▸ CA12 O43570 2/20 0.41
▸ CA1 P00915 2/20 0.41
▸ CA2 P00918 2/20 0.41
▸ CA7 P43166 2/20 0.41
▸ CA9 Q16790 2/20 0.41
▸ CA14 Q9ULX7 2/20 0.41
▸ ACMSD Q8TDX5 2/20 0.41
▸ KDM4E B2RXH2 1/20 0.40
▸ GLA P06280 1/20 0.40
▸ HTT P42858 1/20 0.40
▸ KMT2A Q03164 1/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.40
▸ HIF1A Q16665 1/20 0.40
▸ TDP1 Q9NUW8 1/20 0.40
▸ L3MBTL1 Q9Y468 1/20 0.40
▸ CEL P19835 2/20 0.39
▸ HDAC4 P56524 1/20 0.38
▸ HDAC2 Q92769 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17323530 0.98 KMO (0.51) KMOPTGDR2CA12CA1CA2
SCHEMBL17323537 0.98 KMO (0.51) KMOPTGDR2CA12CA1CA2
SCHEMBL17323545 0.98 KMO (0.51) KMOPTGDR2CA12CA1CA2
SCHEMBL17323527 0.96 KMO (0.44) KMOPTGDR2CA12CA1CA2
SCHEMBL17323526 0.91 CA12 (0.44) KMOPTGDR2CA12CA1CA2
SCHEMBL11405090 0.89 ACMSD (0.44) KMOPTGDR2ACMSDCAMKK2CAMKK1
SCHEMBL21581015 0.88 KMO (0.44) KMOPTGDR2CA12CA1CA2
SCHEMBL1705927 0.87 KMO (0.46) KMOPTGDR2ACMSDKDM4EGLA
SCHEMBL15570366 0.87 TAS1R3 (0.47) KMOPTGDR2GLACEL
SCHEMBL15570286 0.86 TAS1R3 (0.46) KMOPTGDR2GLAKMT2ACEL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
EP-4276534-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 — — EP disclosed
EP-4276533-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 — — EP disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
EP-4198630-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2023-06-21 — — EP disclosed
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-10 — — US disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 — — US disclosed
US-9645493-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 — — US disclosed
US-9645493-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 — — US disclosed
EP-3081988-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-19 — — EP disclosed
US-20160299430-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-20160299430-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 — — US disclosed
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 — — US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 — — US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process PARG, PCNA, PLK2 KMO 1787/4885PTGDR2 3645/4885CA12 3404/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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