Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMO | O15229 | 2/20 | 0.51 |
| ▸ | PTGDR2 | Q9Y5Y4 | 8/20 | 0.50 |
| ▸ | ACMSD | Q8TDX5 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.42 |
| ▸ | GLA | P06280 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | CEL | P19835 | 2/20 | 0.41 |
| ▸ | CA12 | O43570 | 1/20 | 0.40 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | CA7 | P43166 | 1/20 | 0.40 |
| ▸ | CA9 | Q16790 | 1/20 | 0.40 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.40 |
| ▸ | PTGDR | Q13258 | 3/20 | 0.39 |
| ▸ | PTGER2 | P43116 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17323530 | 1.00 | KMO (0.51) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL17323537 | 1.00 | KMO (0.51) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL17323529 | 0.98 | KMO (0.49) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL17323527 | 0.94 | KMO (0.44) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL21581015 | 0.90 | KMO (0.44) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL17323526 | 0.90 | CA12 (0.44) | KMOPTGDR2CA12CA1CA2 | |
| SCHEMBL1705927 | 0.89 | KMO (0.46) | KMOPTGDR2ACMSDKMT2AKDM4E | |
| SCHEMBL15570286 | 0.88 | TAS1R3 (0.46) | KMOPTGDR2KMT2AGLACEL | |
| SCHEMBL11405090 | 0.87 | ACMSD (0.44) | KMOPTGDR2ACMSDALDH1A1 | |
| Phthalic Acid SCHEMBL11407238 | 0.86 | PTGDR2 (0.47) | KMOPTGDR2ACMSDKMT2AALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| EP-4276533-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-11-15 | — | — | EP | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-20220404701-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-12-22 | — | — | US | disclosed |
| EP-3572876-B1 | MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2021-04-14 | — | — | EP | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| EP-3081988-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2016-10-19 | — | — | EP | disclosed |
| US-20160299430-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299430-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9348227-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-24 | — | — | US | disclosed |
| US-9348227-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-24 | — | — | US | disclosed |
| US-20150355544-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150355544-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | PARG, PCNA, PLK2 | KMO 1787/4885PTGDR2 3645/4885ACMSD 641/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.