SCHEMBL17323545

SCHEMBL17323545

O=C(O)c1c(C2CCCCC2)cccc1C1CCCCC1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMO O15229 2/20 0.51
▸ PTGDR2 Q9Y5Y4 8/20 0.50
▸ ACMSD Q8TDX5 2/20 0.42
▸ KMT2A Q03164 2/20 0.42
▸ KDM4E B2RXH2 1/20 0.42
▸ GLA P06280 1/20 0.42
▸ HTT P42858 1/20 0.42
▸ SMN1; SMN2 Q16637 1/20 0.42
▸ HIF1A Q16665 1/20 0.42
▸ TDP1 Q9NUW8 1/20 0.42
▸ L3MBTL1 Q9Y468 1/20 0.42
▸ CEL P19835 2/20 0.41
▸ CA12 O43570 1/20 0.40
▸ CA1 P00915 1/20 0.40
▸ CA2 P00918 1/20 0.40
▸ CA7 P43166 1/20 0.40
▸ CA9 Q16790 1/20 0.40
▸ CA14 Q9ULX7 1/20 0.40
▸ PTGDR Q13258 3/20 0.39
▸ PTGER2 P43116 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17323530 1.00 KMO (0.51) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL17323537 1.00 KMO (0.51) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL17323529 0.98 KMO (0.49) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL17323527 0.94 KMO (0.44) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL21581015 0.90 KMO (0.44) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL17323526 0.90 CA12 (0.44) KMOPTGDR2CA12CA1CA2
SCHEMBL1705927 0.89 KMO (0.46) KMOPTGDR2ACMSDKMT2AKDM4E
SCHEMBL15570286 0.88 TAS1R3 (0.46) KMOPTGDR2KMT2AGLACEL
SCHEMBL11405090 0.87 ACMSD (0.44) KMOPTGDR2ACMSDALDH1A1
Phthalic Acid SCHEMBL11407238 0.86 PTGDR2 (0.47) KMOPTGDR2ACMSDKMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 — — US disclosed
EP-4276533-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2023-11-15 — — EP disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 — — US disclosed
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-10 — — US disclosed
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
EP-3572876-B1 MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2021-04-14 — — EP disclosed
US-20170210836-A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-27 — — US disclosed
US-9645493-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 — — US disclosed
US-9645493-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 — — US disclosed
EP-3081988-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-19 — — EP disclosed
US-20160299430-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-20160299430-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 — — US disclosed
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 — — US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 — — US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process PARG, PCNA, PLK2 KMO 1787/4885PTGDR2 3645/4885ACMSD 641/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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