SCHEMBL17323554

SCHEMBL17323554

CC(C)(C)c1cc2ccccc2c(C(C)(C)C)c1C(=O)O

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.53
MEN1 O00255 3/20 0.53
KMT2A Q03164 3/20 0.53
HPGD P15428 2/20 0.53
KDM4E B2RXH2 2/20 0.53
HSD17B10 Q99714 2/20 0.53
CYP1A2 P05177 1/20 0.53
GLA P06280 1/20 0.53
CYP2C19 P33261 1/20 0.53
GLRA3 O75311 1/20 0.43
GLRB P48167 1/20 0.43
NPC1 O15118 1/20 0.39
LMNA P02545 1/20 0.39
GAA P10253 1/20 0.39
MAPT P10636 1/20 0.39
HTT P42858 1/20 0.39
RAB9A P51151 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
CDC25B P30305 5/20 0.39
PDE10A Q9Y233 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22623597 0.84 MEN1 (0.53) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL19195723 0.81 GLRA3 (0.66) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL9043846 0.80 ALDH1A1 (0.45) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL9325873 0.79 GLRA3 (0.64) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL17323564 0.79 KDM4E (0.47) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL19164270 0.77 GLRA3 (0.63) ALDH1A1MEN1KMT2AKDM4ECYP1A2
SCHEMBL8338477 0.76 CA2 (0.42) ALDH1A1MEN1KMT2AHPGDCYP1A2
SCHEMBL22471784 0.75 ALDH1A1 (0.37) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL974719 0.75 HSD17B10 (0.53) ALDH1A1MEN1KMT2AHPGDKDM4E
SCHEMBL9838388 0.74 GPR35 (0.58) ALDH1A1MEN1KMT2AHPGDKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 US disclosed
US-9348227-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-24 US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 US disclosed
US-20150355544-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-10 US disclosed