Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD17B1 | P14061 | 4/20 | 0.44 |
| ▸ | HSD17B2 | P37059 | 4/20 | 0.44 |
| ▸ | KIF11 | P52732 | 1/20 | 0.39 |
| ▸ | CSNK2A2 | P19784 | 1/20 | 0.39 |
| ▸ | CSNK2B | P67870 | 1/20 | 0.39 |
| ▸ | CSNK2A1 | P68400 | 1/20 | 0.39 |
| ▸ | CES2 | O00748 | 1/20 | 0.36 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.36 |
| ▸ | IDO1 | P14902 | 1/20 | 0.36 |
| ▸ | TMPRSS4 | Q9NRS4 | 2/20 | 0.35 |
| ▸ | NQO2 | P16083 | 1/20 | 0.34 |
| ▸ | HSD17B3 | P37058 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 2/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | SLC9A1 | P19634 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11060525 | 0.86 | HSD17B1 (0.50) | HSD17B1HSD17B2IDO1NQO2MEN1 | |
| SCHEMBL6566550 | 0.79 | IDO1 (0.59) | HSD17B1HSD17B2KIF11IDO1MEN1 | |
| SCHEMBL26793696 | 0.76 | HSD17B1 (0.46) | HSD17B1HSD17B2MEN1KMT2ASLC9A1 | |
| SCHEMBL29507259 | 0.76 | IDO1 (0.56) | IDO1CYP1A2CYP3A4MAPTTSHR | |
| SCHEMBL11281349 | 0.76 | IDO1 (0.56) | IDO1CYP1A2CYP3A4MAPTTSHR | |
| SCHEMBL17341736 | 0.72 | PIM1 (0.43) | HSD17B1HSD17B2KIF11CSNK2A2CSNK2B | |
| SCHEMBL17341740 | 0.70 | HSD17B1 (0.48) | HSD17B1HSD17B2MCL1IDO1MEN1 | |
| SCHEMBL1938893 | 0.68 | HSD17B1 (0.65) | HSD17B1HSD17B2KIF11ARAPP | |
| SCHEMBL10698981 | 0.68 | KIF11 (0.41) | HSD17B1HSD17B2KIF11CSNK2A2CSNK2B | |
| SCHEMBL4184980 | 0.68 | KIF11 (0.50) | HSD17B1HSD17B2KIF11CES2HSD17B3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10042258-B2 | Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-07 | — | — | US | disclosed |
| US-10042258-B2 | Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-07 | — | — | US | disclosed |
| US-20170293227-A1 | COATING LIQUID FOR RESIST PATTERN COATING | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-10-12 | — | — | US | disclosed |
| US-20170293227-A1 | COATING LIQUID FOR RESIST PATTERN COATING | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-10-12 | — | — | US | disclosed |
| US-9746768-B2 | Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| US-9746768-B2 | Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| US-20170205711-A1 | COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-07-20 | — | — | US | disclosed |
| US-20170205711-A1 | COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-07-20 | — | — | US | disclosed |
| US-20150362835-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-17 | — | — | US | disclosed |
| US-20150362835-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-17 | — | — | US | disclosed |