SCHEMBL17359235

SCHEMBL17359235

COCc1cc(C(c2ccc(C(c3cc(COC)c(O)c(COC)c3)c3cc(COC)c(O)c(COC)c3)cc2)c2cc(COC)c(O)c(COC)c2)cc(COC)c1O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PRKCE Q02156 3/20 0.44
MYLK Q15746 2/20 0.44
MAPT P10636 2/20 0.44
TDP1 Q9NUW8 2/20 0.44
MEN1 O00255 1/20 0.44
ALDH1A1 P00352 1/20 0.44
PRKCG P05129 1/20 0.44
PRKCA P17252 1/20 0.44
APEX1 P27695 1/20 0.44
RECQL P46063 1/20 0.44
KMT2A Q03164 1/20 0.44
KDM4E B2RXH2 3/20 0.36
GAA P10253 2/20 0.36
HSD17B3 P37058 1/20 0.35
IDH1 O75874 1/20 0.33
NPC1 O15118 1/20 0.33
ALOX12 P18054 1/20 0.33
HTT P42858 1/20 0.33
RAB9A P51151 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12152954 0.94 PRKCE (0.48) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL17356541 0.93 PRKCE (0.40) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL20683924 0.91 PRKCE (0.41) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL17354945 0.90 PRKCE (0.38) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL12133572 0.90 PRKCE (0.38) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL23919618 0.90 PRKCE (0.43) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL15450550 0.87 PRKCE (0.36) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL17356551 0.87 PRKCE (0.43) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL14028989 0.86 PRKCE (0.43) PRKCEMYLKMAPTTDP1MEN1
SCHEMBL25446805 0.85 PRKCE (0.42) PRKCEMYLKMAPTTDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024018957-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2024-01-25 WO disclosed
US-20230350294-A1 Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
EP-4067999-B1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHINETSU CHEMICAL CO (JP) 2023-10-04 EP disclosed
EP-4063954-B1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE DRY FILM, METHOD FOR PRODUCING POSITIVE PHOTOSENSITIVE DRY FILM, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHINETSU CHEMICAL CO (JP) 2023-10-04 EP disclosed
EP-3398983-B1 POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHINETSU CHEMICAL CO (JP) 2023-09-27 EP disclosed
US-11768434-B2 Polymer having a structure of polyamide, polyamide-imide, or polyimide, photosensitive resin composition, patterning process, photosensitive dry film, and protective film for electric and electronic parts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-26 US disclosed
US-11572442-B2 Compound, polyimide resin and method of producing the same, photosensitive resin composition, patterning method and method of forming cured film, interlayer insulating film, surface protective film, and electronic component INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2023-02-07 US disclosed
EP-4067999-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2022-10-05 EP disclosed
US-11333975-B2 Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2022-05-17 US disclosed
EP-3974904-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2022-03-30 EP disclosed
US-9557645-B2 Positive photosensitive resin composition, photo-curable dry film and method for producing same, layered product, patterning process, and substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-31 US disclosed
EP-2980172-B1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHINETSU CHEMICAL CO (JP) 2016-11-02 EP disclosed
US-20160200877-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, SUBSTRATE, AND SEMICONDUCTOR APPARATUS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-07-14 US disclosed
US-9377689-B2 Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, patterning process, and electric/electronic part-protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-28 US disclosed
US-20160147154-A1 PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20160147154-A1 PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20160097973-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND AND METHOD FOR PRODUCING SAME, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160033865-A1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-04 US disclosed
EP-2980172-A1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM Shin-Etsu Chemical Co., Ltd. (JP) 2016-02-03 EP disclosed
US-20150370166-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, LAYERED PRODUCT, PATTERNING PROCESS, AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-24 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160033865-A1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SMC4, SMC3, PUF60 PRKCE 1092/4885MYLK 460/4885MAPT 804/4885
US-11572442-B2 Compound, polyimide resin and method of producing the same, photosensitive resin composition, patterning method and method of forming cured film, interlayer insulating film, surface protective film, and electronic component BRIX1, RBX1, HAX1 PRKCE 3921/4885MYLK 3966/4885MAPT 3586/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.