SCHEMBL1764482

SCHEMBL1764482

CCc1ccc(OS(=O)(=O)[O-])cc1.COc1cc(Nc2ccccc2)ccc1[N+]#N

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PPARG P37231 1/20 0.40
PPARD Q03181 1/20 0.40
PPARA Q07869 1/20 0.40
HTT P42858 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
TP53 P04637 1/20 0.38
RAB9A P51151 2/20 0.37
MEN1 O00255 6/20 0.37
KMT2A Q03164 6/20 0.37
NPC1 O15118 1/20 0.37
MAPT P10636 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
CASP3 P42574 1/20 0.36
SENP8 Q96LD8 1/20 0.36
SENP7 Q9BQF6 1/20 0.36
SENP6 Q9GZR1 1/20 0.36
MTNR1B P49286 2/20 0.36
LMNA P02545 1/20 0.36
ALOX12 P18054 1/20 0.36
ALPL P05186 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1764456 0.92 PPARG (0.43) PPARGPPARDPPARAHTTTP53
SCHEMBL1765016 0.86 HTT (0.42) PPARGPPARDPPARAHTTMEN1
Sulfuric Acid SCHEMBL1123017 0.84 PPARG (0.44) PPARGPPARDPPARAHTTMEN1
Sulfuric Acid SCHEMBL6929881 0.83 PPARG (0.43) PPARGPPARDPPARAHTTMEN1
Sulfuric Acid SCHEMBL5698877 0.81 MEN1 (0.45) PPARGPPARDPPARAHTTMEN1
SCHEMBL5854747 0.81 CTSV (0.40) PPARGPPARDPPARAHTTMEN1
Sulfuric Acid SCHEMBL6357625 0.79 MEN1 (0.47) PPARGPPARDPPARAMEN1KMT2A
Amylosulfuric Acid SCHEMBL5854420 0.79 PPARG (0.41) PPARGPPARDPPARAMEN1KMT2A
SCHEMBL92096 0.79 MEN1 (0.47) PPARGPPARDPPARANPSR1RAB9A
Trifluoromethanesulfonic Acid SCHEMBL11060685 0.79 PPARG (0.41) PPARGPPARDPPARAHTTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11909031-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2024-02-20 US disclosed
US-20230091130-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2023-03-23 US disclosed
US-11588147-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2023-02-21 US disclosed
US-20200119333-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2020-04-16 US disclosed
WO-2018164076-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2018-09-13 WO disclosed
US-9229136-B2 Microlens array unit and image processing apparatus TOSHIBA TEC KABUSHIKI KAISHA (JP) 2016-01-05 US disclosed
US-8976422-B2 Image forming apparatus, lens array and forming method of same TOSHIBA TEC KABUSHIKI KAISHA (JP) 2015-03-10 US disclosed
US-20140084141-A1 LIGHT BLOCKING INK, MICROLENS ARRAY UNIT, IMAGE PROCESSING APPARATUS TOSHIBA TEC KABUSHIKI KAISHA (JP) 2014-03-27 US disclosed
US-20130235451-A1 LENS ARRAY, IMAGE FORMING DEVICE AND METHOD FOR MANUFACTURING LENS ARRAY TOSHIBA TEC KABUSHIKI KAISHA (JP) 2013-09-12 US disclosed
US-20130235434-A1 IMAGE FORMING APPARATUS, LENS ARRAY AND FORMING METHOD OF SAME TOSHIBA TEC KABUSHIKI KAISHA (JP) 2013-09-12 US disclosed
US-6660450-B2 Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-09 US disclosed
US-20030149225-A1 Resin useful for resist, resist composition and pattern forming process using the same KABUSHIKI KAISHA TOSHIBA (JP) 2003-08-07 US disclosed
US-6541597-B2 Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. KABUSHIKI KAISHA TOSHIBA (JP) 2003-04-01 US disclosed
US-20020098441-A1 Resin useful for resist, resist composition and pattern forming process using the same KABUSHIKI KAISHA TOSHIBA (JP) 2002-07-25 US disclosed
US-6410748-B1 Alicycli c group-containing monomer KABUSHIKI KAISHA TOSHIBA (JP) 2002-06-25 US disclosed
US-6303266-B1 FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION KABUSHIKI KAISHA TOSHIBA (JP) 2001-10-16 US disclosed
US-6291129-B1 LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS KABUSHIKI KAISHA TOSHIBA (JP) 2001-09-18 US disclosed
US-6071670-A PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-06-06 US disclosed
US-6060207-A LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON KABUSHIKI KAISHA TOSHIBA (JP) 2000-05-09 US disclosed
US-5932391-A CONTAINING AN ACYCLIC COMPOUND WHICH IS A VINYL POLYMERBEING LIGHT ABSORBENT KABUSHIKI KAISHA TOSHIBA (JP) 1999-08-03 US disclosed