SCHEMBL1765016

SCHEMBL1765016

COc1cc(Nc2ccccc2)ccc1[N+]#N.O=S(=O)([O-])Oc1ccc2ccccc2c1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.42
SMN1; SMN2 Q16637 2/20 0.42
LMNA P02545 2/20 0.42
TDP1 Q9NUW8 2/20 0.42
L3MBTL1 Q9Y468 2/20 0.42
ALDH1A1 P00352 1/20 0.41
CYP3A4 P08684 1/20 0.41
HPGD P15428 1/20 0.41
HSD17B10 Q99714 1/20 0.41
SNCA P37840 1/20 0.40
PPARG P37231 1/20 0.39
PPARD Q03181 1/20 0.39
PPARA Q07869 1/20 0.39
MEN1 O00255 5/20 0.39
KMT2A Q03164 5/20 0.39
MAPT P10636 1/20 0.39
CASP3 P42574 1/20 0.37
SENP8 Q96LD8 1/20 0.37
SENP7 Q9BQF6 1/20 0.37
SENP6 Q9GZR1 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1764456 0.91 PPARG (0.43) HTTLMNACYP3A4HSD17B10SNCA
SCHEMBL1764482 0.86 PPARG (0.40) HTTSMN1; SMN2LMNAL3MBTL1ALDH1A1
Sulfuric Acid SCHEMBL1123017 0.85 PPARG (0.44) HTTSMN1; SMN2LMNAL3MBTL1SNCA
Sulfuric Acid SCHEMBL6929881 0.84 PPARG (0.43) HTTSMN1; SMN2LMNAL3MBTL1SNCA
Sulfuric Acid SCHEMBL5698877 0.83 MEN1 (0.45) HTTLMNAL3MBTL1ALDH1A1SNCA
Sulfuric Acid SCHEMBL6357625 0.81 MEN1 (0.47) LMNAALDH1A1SNCAPPARGPPARD
SCHEMBL92096 0.80 MEN1 (0.47) TDP1L3MBTL1ALDH1A1CYP3A4HPGD
Trifluoromethanesulfonic Acid SCHEMBL11060685 0.80 PPARG (0.41) HTTLMNAL3MBTL1SNCAPPARG
Hydrochloric Acid SCHEMBL8080600 0.79 MEN1 (0.46) TDP1L3MBTL1ALDH1A1CYP3A4HPGD
Bromide SCHEMBL9172630 0.79 MEN1 (0.46) TDP1L3MBTL1ALDH1A1CYP3A4HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11909031-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2024-02-20 US disclosed
US-20230091130-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2023-03-23 US disclosed
US-11588147-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2023-02-21 US disclosed
US-20200119333-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2020-04-16 US disclosed
EP-3374467-B1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS ROLIC TECH AG (CH) 2020-04-15 EP disclosed
US-20180320072-A1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS Rolic Technologies AG (CH) 2018-11-08 US disclosed
EP-3374467-A1 COMPOSITIONS OF PHOTO-ALIGNABLE MATERIALS ROLIC Technologies AG (CH) 2018-09-19 EP disclosed
WO-2018164076-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2018-09-13 WO disclosed
US-20180128945-A1 LENS ARRAY AND IMAGE FORMING APPARATUS TOSHIBA TEC KK (JP) 2018-05-10 US disclosed
US-9835772-B2 Lens array and image forming apparatus TOSHIBA TEC KABUSHIKI KAISHA (JP) 2017-12-05 US disclosed
US-6660450-B2 Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-09 US disclosed
US-20030149225-A1 Resin useful for resist, resist composition and pattern forming process using the same KABUSHIKI KAISHA TOSHIBA (JP) 2003-08-07 US disclosed
US-6541597-B2 Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. KABUSHIKI KAISHA TOSHIBA (JP) 2003-04-01 US disclosed
US-20020098441-A1 Resin useful for resist, resist composition and pattern forming process using the same KABUSHIKI KAISHA TOSHIBA (JP) 2002-07-25 US disclosed
US-6410748-B1 Alicycli c group-containing monomer KABUSHIKI KAISHA TOSHIBA (JP) 2002-06-25 US disclosed
US-6303266-B1 FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION KABUSHIKI KAISHA TOSHIBA (JP) 2001-10-16 US disclosed
US-6291129-B1 LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS KABUSHIKI KAISHA TOSHIBA (JP) 2001-09-18 US disclosed
US-6071670-A PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-06-06 US disclosed
US-6060207-A LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON KABUSHIKI KAISHA TOSHIBA (JP) 2000-05-09 US disclosed
US-5932391-A CONTAINING AN ACYCLIC COMPOUND WHICH IS A VINYL POLYMERBEING LIGHT ABSORBENT KABUSHIKI KAISHA TOSHIBA (JP) 1999-08-03 US disclosed