SCHEMBL17688495

SCHEMBL17688495

CCCCCS(=O)(=O)C=[N+]=[N-]

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 1/20 0.45
S1PR2 O95136 1/20 0.45
S1PR4 O95977 1/20 0.45
ALDH1A1 P00352 1/20 0.45
LMNA P02545 1/20 0.45
TP53 P04637 1/20 0.45
POLB P06746 1/20 0.45
MAPT P10636 1/20 0.45
HPGD P15428 1/20 0.45
XBP1 P17861 1/20 0.45
S1PR1 P21453 1/20 0.45
MAPK1 P28482 1/20 0.45
AGTR1 P30556 1/20 0.45
HTT P42858 1/20 0.45
RAB9A P51151 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
NPSR1 Q6W5P4 1/20 0.45
HSD17B10 Q99714 1/20 0.45
FAAH O00519 6/20 0.41
CA2 P00918 6/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8357995 0.98 FAAH (0.45) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL27508414 0.98 FAAH (0.45) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL16829660 0.93 ALDH1A1 (0.52) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL27611668 0.76 CA2 (0.34) CA2
SCHEMBL28750745 0.72 NPC1 (0.52) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL66144 0.71 FAAH (0.43) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL10826545 0.70 ALDH1A1 (0.86) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL10446938 0.70 FAAH (0.52) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL11094414 0.70 FAAH (0.52) NPC1S1PR2S1PR4ALDH1A1LMNA
SCHEMBL10826548 0.70 ALDH1A1 (0.86) NPC1S1PR2S1PR4ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021149542-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD 信越化学工業株式会社 2021-07-29 WO disclosed
WO-2021111834-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT EMITTING ELEMENT 信越化学工業株式会社 2021-06-10 WO disclosed
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN disclosed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107949808-A Lower layer film for lithography forms material, lower layer film for lithography is formed with composition, lower layer film for lithography and its manufacture method, pattern formation method, resin and purification process 三菱瓦斯化学株式会社 2018-04-20 CN disclosed
CN-104981463-B Compound, lower layer film for lithography form material, lower layer film for lithography and pattern formation method 三菱瓦斯化学株式会社 2018-04-13 CN disclosed
CN-107556480-A High-molecular compound containing silicone backbone, Photocurable resin composition, photo-curable dry film, laminate and pattern formation method 信越化学工业株式会社 2018-01-09 CN disclosed
CN-107531597-A Compound, resin, lower layer film for lithography form material, lower layer film for lithography, pattern formation method and the purification process of compound or resin 三菱瓦斯化学株式会社 2018-01-02 CN disclosed
CN-107250089-A Compound, resin, lower layer film for lithography formation material, lower layer film for lithography form the purification process with composition, lower layer film for lithography, corrosion-resisting pattern forming method, circuit pattern forming method and compound or resin 三菱瓦斯化学株式会社 2017-10-13 CN disclosed
CN-106687009-A Structure modification apparatus 宝洁公司 2017-05-17 CN disclosed
CN-103907057-A Nanocomposite negative photosensitive composition and use thereof AZ ELECTRONIC MATERIALS USA 2014-07-02 CN disclosed
CN-103869623-A Coating composition AZ ELECTRONIC MATERIALS USA 2014-06-18 CN disclosed
CN-102209937-B Coating composition AZ ELECTRONIC MATERIALS USA 2014-06-11 CN disclosed
CN-103733136-A Underlayer film forming material for lithography, underlayer film for lithography, and pattern forming method MITSUBISHI GAS CHEMICAL CO 2014-04-16 CN disclosed
CN-101889247-B Composition for forming underlayer film for lithography and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL CO 2013-04-03 CN disclosed
CN-102754033-A Underlayer film material and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL CO 2012-10-24 CN disclosed
CN-101263429-B pattern forming method using film-forming composition TOKYO OHKA KOGYO CO.,LTD. (JP) 2011-12-28 CN disclosed
CN-102209937-A Coating composition AZ ELECTRONIC MATERIALS USA 2011-10-05 CN disclosed
CN-101889247-A Composition for forming underlayer film for lithography and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL CO 2010-11-17 CN disclosed
CN-101263429-A Film-forming composition, pattern-forming method using the same, and three-dimensional mold TOKYO OHKA KOGYO CO LTD (JP) 2008-09-10 CN disclosed