SCHEMBL66144

SCHEMBL66144

CCCCCS(=O)(=O)C(=[N+]=[N-])S(=O)(=O)CCCCC

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FAAH O00519 5/20 0.43
CA2 P00918 4/20 0.39
ENPP2 Q13822 3/20 0.37
NPC1 O15118 1/20 0.37
S1PR2 O95136 1/20 0.37
S1PR4 O95977 1/20 0.37
ALDH1A1 P00352 1/20 0.37
LMNA P02545 1/20 0.37
TP53 P04637 1/20 0.37
POLB P06746 1/20 0.37
MAPT P10636 1/20 0.37
HPGD P15428 1/20 0.37
XBP1 P17861 1/20 0.37
S1PR1 P21453 1/20 0.37
MAPK1 P28482 1/20 0.37
AGTR1 P30556 1/20 0.37
HTT P42858 1/20 0.37
RAB9A P51151 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6929986 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL3367410 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL6931623 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL6931423 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL6932972 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL9010763 0.98 FAAH (0.46) FAAHCA2ENPP2CES1CES2
SCHEMBL64899 0.93 HTT (0.43) FAAHCA2ENPP2NPC1S1PR2
SCHEMBL63956 0.86 MEN1 (0.38) FAAHNPC1S1PR2S1PR4ALDH1A1
SCHEMBL7271949 0.79 NPC1 (0.36) ENPP2NPC1S1PR2S1PR4ALDH1A1
SCHEMBL383998 0.78 MEN1 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 967 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6673516-B2 Coating composition for chemically amplified positive resist and method of patterning resist using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2004-01-06 US claimed
US-6416926-B1 TERPOLYMER OF THIABICYCLOESTER, NORBORNENE ACIDS AND ESTERS, AND MALEIC ANHYDRIDE; EXCELLENT ADHESION; INEXPENSIVE HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2002-07-09 US claimed
US-20020055063-A1 Coating composition for chemically amplified positive resist and method of patterning resist using the same TOKYO OHKA KOGYO CO., LTD. 2002-05-09 US claimed
US-6265130-B1 COPOLYMERS OF BICYCLOALKENECARBONYLMALONATES HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2001-07-24 US claimed
US-6150069-A Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-11-21 US claimed
EP-0762207-B1 Positive working photosensitive composition and method of producing relief structures BASF AG (DE) 2000-04-12 EP claimed
EP-0762207-A2 Positive working photosensitive composition and method of producing relief structures BASF AKTIENGESELLSCHAFT (DE) 1997-03-12 EP claimed
EP-0628876-A1 Environmentally stable highly sensitive acid amplifier photoresists International Business Machines Corporation (US) 1994-12-14 EP claimed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
EP-0762207-A2 Positive working photosensitive composition and method of producing relief structures BASF AKTIENGESELLSCHAFT (DE) 1997-03-12 EP disclosed
EP-0417557-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5338641-A Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-16 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417557-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 FAAH 3026/4885CA2 291/4885ENPP2 3976/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 FAAH 4470/4885CA2 285/4885ENPP2 4376/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 FAAH 3559/4885CA2 1038/4885ENPP2 3974/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.