SCHEMBL17736504

SCHEMBL17736504

CC(C)(C)C(=O)/C(=N\OS(=O)(=O)c1ccc(C2CCCCC2)cc1)c1nc2ccccc2o1

nearest known ligand 0.40

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ FAAH O00519 2/20 0.40
▸ CTSS P25774 2/20 0.39
▸ XDH P47989 8/20 0.36
▸ NLRP3 Q96P20 2/20 0.36
▸ KMT2A Q03164 2/20 0.36
▸ MEN1 O00255 1/20 0.36
▸ RBP4 P02753 1/20 0.34
▸ ALDH1A1 P00352 1/20 0.34
▸ SMN1; SMN2 Q16637 1/20 0.34
▸ NPSR1 Q6W5P4 1/20 0.34
▸ L3MBTL1 Q9Y468 1/20 0.34
▸ HSD17B10 Q99714 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736498 0.88 FAAH (0.39) FAAHCTSSXDHNLRP3RBP4
SCHEMBL16381780 0.85 XDH (0.50) FAAHXDHNLRP3SMN1; SMN2
SCHEMBL16745522 0.80 CTSS (0.45) FAAHCTSSXDHNLRP3
SCHEMBL17736515 0.77 HDAC4 (0.31) KMT2AMEN1
SCHEMBL16745520 0.76 XDH (0.49) FAAHCTSSXDHNLRP3SMN1; SMN2
SCHEMBL16381776 0.76 XDH (0.47) XDHNLRP3SMN1; SMN2
SCHEMBL16745523 0.75 XDH (0.39) XDHNLRP3KMT2AMEN1ALDH1A1
SCHEMBL17341908 0.74 NPC1 (0.48) FAAHXDHNLRP3KMT2AMEN1
SCHEMBL17736500 0.74 XDH (0.39) FAAHXDHNLRP3
SCHEMBL16745529 0.74 GAA (0.41) XDHNLRP3KMT2AMEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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