SCHEMBL17736498

SCHEMBL17736498

CC(C)(C)C(=O)/C(=N\OS(=O)(=O)c1c(C2CCCCC2)cc(C2CCCCC2)cc1C1CCCCC1)c1nc2ccccc2o1

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ FAAH O00519 2/20 0.39
▸ RBP4 P02753 1/20 0.37
▸ CTSS P25774 2/20 0.36
▸ XDH P47989 7/20 0.35
▸ HSD17B10 Q99714 1/20 0.33
▸ NPC1 O15118 2/20 0.33
▸ RAB9A P51151 2/20 0.33
▸ TLR4 O00206 1/20 0.33
▸ NLRP3 Q96P20 1/20 0.33
▸ TNF P01375 1/20 0.33
▸ HSF1 Q00613 2/20 0.33
▸ LMNA P02545 1/20 0.32
▸ SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736504 0.88 FAAH (0.40) FAAHRBP4CTSSXDHHSD17B10
SCHEMBL17736484 0.83 MAOB (0.40) FAAHRBP4NPC1RAB9ALMNA
SCHEMBL17736515 0.79 HDAC4 (0.31) NPC1
SCHEMBL17736514 0.78 MAOB (0.31) —
SCHEMBL17736497 0.77 XDH (0.37) FAAHXDHNPC1RAB9ATLR4
SCHEMBL16381780 0.76 XDH (0.50) FAAHXDHNPC1RAB9ATLR4
SCHEMBL17341908 0.73 NPC1 (0.48) FAAHRBP4XDHNPC1RAB9A
SCHEMBL17736500 0.73 XDH (0.39) FAAHXDHNPC1RAB9ATLR4
SCHEMBL16745522 0.73 CTSS (0.45) FAAHCTSSXDHNLRP3
SCHEMBL17341906 0.70 XDH (0.43) FAAHRBP4XDHNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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