SCHEMBL49474

SCHEMBL49474

CN(C)[Si](N(C)C)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28290796 0.94
SCHEMBL20496600 0.76
SCHEMBL1013364 0.71
SCHEMBL430721 0.67
SCHEMBL377532 0.67
SCHEMBL25220941 0.63
SCHEMBL691686 0.63
SCHEMBL49557 0.63
SCHEMBL3944358 0.63
SCHEMBL19101225 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2206 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260123302-A1 METHOD AND APPARATUS FOR DEPOSITING A CARBON-CONTAINING MATERIAL ASM IP HOLDING BV (NL) 2026-04-30 US claimed
US-12604684-B2 Method and system for mitigating underlayer damage during formation of patterned structures ASM IP HOLDING B.V. (NL) 2026-04-14 US claimed
US-12554191-B2 Pellicle membrane and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-17 US claimed
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
US-20250320604-A1 LOW TEMPERATURE PLASMA DEPOSITION OF SILICON-CONTAINING FILMS USING HYDROGEN PEROXIDE GELEST INC (US) 2025-10-16 US claimed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-12435416-B2 Compositions and methods using same for non-conformal deposition of silicon containing films VERSUM MATERIALS US, LLC (US) 2025-10-07 US claimed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20250223704-A1 SPIN-COATABLE METAL DOPED SILICON-CONTAINING FILM-FORMING COMPOSITIONS AND PROCESSES OF USING THEM FOR DEPOSITION L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L’EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2025-07-10 US claimed
US-5837056-A Method for growing III-V group compound semiconductor crystal FUJITSU LIMITED (JP) 1998-11-17 US claimed
US-5772757-A Apparatus and method for growing semiconductor crystal FUJITSU LIMITED (JP) 1998-06-30 US claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
US-5656076-A USING SILICON DOPANT THAT INCLUDES A SILICON ATOM BONDED TO AN ALKYL AND A HYDROGEN FUJITSU LIMITED (JP) 1997-08-12 US claimed
EP-0540084-B1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM SPA (IT) 1996-09-04 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
US-5424095-A Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking ENIRICERCHE S.P.A. (IT) 1995-06-13 US claimed
EP-0540084-A1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM S.p.A. (IT) 1993-05-05 EP claimed
US-5208069-A Silane precursor ISTITUTO GUIDO DONEGANI S.P.A. (IT) 1993-05-04 US claimed
US-5208284-A Coating composition ETHYL CORPORATION (US) 1993-05-04 US claimed