SCHEMBL1013364

SCHEMBL1013364

CN(C)[Si](N(C)C)(N(C)C)[Si](N(C)C)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL49474 0.71
SCHEMBL430721 0.67
SCHEMBL377532 0.67
SCHEMBL28290796 0.67
SCHEMBL25220941 0.63
SCHEMBL9014234 0.63
SCHEMBL691686 0.63
SCHEMBL17686761 0.63
SCHEMBL19101225 0.63
SCHEMBL20496600 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
US-20250188609-A1 SEAM-FREE AND CRACK-FREE DEPOSITION LAM RES CORP (US) 2025-06-12 US disclosed
US-20250166989-A1 THERMAL FILM DEPOSITION LAM RES CORP (US) 2025-05-22 US disclosed
US-20250054747-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-02-13 US disclosed
US-20250038003-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS LAM RESEARCH CORPORATION (US) 2025-01-30 US disclosed
US-20250014890-A1 CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF LAM RESEARCH CORPORATION 2025-01-09 US disclosed
US-20240410053-A1 CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS LAM RES CORP (US) 2024-12-12 US disclosed
US-20240355624-A1 IN-SITU CORE PROTECTION IN MULTI-PATTERNING LAM RES CORP (US) 2024-10-24 US disclosed
US-20240030062-A1 INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION LAM RESEARCH CORPORATION 2024-01-25 US disclosed
US-8377511-B2 Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2013-02-19 US disclosed
US-8153832-B2 Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2012-04-10 US disclosed
EP-2004660-B1 PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF L AIR LIQUIDE SOC ANON A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L ETUDE ET L EXPL DES PROCEDES G (FR) 2011-01-05 EP disclosed
US-20100221428-A1 METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2010-09-02 US disclosed
US-20100016620-A1 PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2010-01-21 US disclosed
EP-2007917-B1 METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION L AIR LIQUIDE SOC ANON A DIREC (FR) 2009-07-29 EP disclosed
EP-2007917-A1 METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION L'Air Liquide Société Anon. à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2008-12-31 EP disclosed
EP-2004660-A1 PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF L'Air Liquide Société Anon. à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2008-12-24 EP disclosed
WO-2007112780-A1 METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION L'AIR LIQUIDE SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2007-10-11 WO disclosed
WO-2007112779-A1 PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF L'AIR LIQUIDE SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2007-10-11 WO disclosed