Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C19 | P33261 | 2/20 | 0.39 |
| ▸ | BLM | P54132 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.39 |
| ▸ | PDE4A | P27815 | 1/20 | 0.39 |
| ▸ | SLC6A6 | P31641 | 1/20 | 0.39 |
| ▸ | APP | P05067 | 1/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.36 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.36 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.36 |
| ▸ | ENPEP | Q07075 | 2/20 | 0.33 |
| ▸ | NOS3 | P29474 | 1/20 | 0.30 |
| ▸ | NOS1 | P29475 | 1/20 | 0.30 |
| ▸ | NOS2 | P35228 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Thiourea SCHEMBL2858681 | 0.98 | LMNA (0.40) | CYP2C19BLMLMNAPTGS1PDE4A | |
| Thiourea SCHEMBL28835107 | 0.95 | CYP2C19 (0.39) | CYP2C19BLMLMNAPTGS1PDE4A | |
| Thiourea SCHEMBL30543064 | 0.95 | CYP2C19 (0.39) | CYP2C19BLMLMNAPTGS1PDE4A | |
| SCHEMBL22418727 | 0.83 | PTGS1 (0.48) | CYP2C19BLMLMNAPTGS1PDE4A | |
| Thiourea SCHEMBL8576993 | 0.83 | BLM (0.43) | CYP2C19BLMLMNAPTGS1PDE4A | |
| SCHEMBL659205 | 0.83 | — | — | |
| SCHEMBL17819149 | 0.83 | — | — | |
| Urea SCHEMBL28149082 | 0.80 | LMNA (0.46) | CYP2C19BLMLMNAPTGS1PDE4A | |
| Water SCHEMBL60895 | 0.80 | — | — | |
| SCHEMBL28719942 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114875392-A | Activating solution and using method thereof | 深圳市松柏实业发展有限公司 | 2022-08-09 | — | — | CN | claimed |
| US-9856572-B2 | Additive for reducing voids after annealing of copper plating with through silicon via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2018-01-02 | — | — | US | claimed |
| US-20160190007-A1 | A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-30 | — | — | US | claimed |
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | claimed |
| CN-103361694-A | Micro-pore electroplated copper filling method for three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology | SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD | 2013-10-23 | — | — | CN | claimed |
| CN-114875392-A | Activating solution and using method thereof | 深圳市松柏实业发展有限公司 | 2022-08-09 | — | — | CN | disclosed |
| CN-114875392-A | Activating solution and using method thereof | 深圳市松柏实业发展有限公司 | 2022-08-09 | — | — | CN | disclosed |
| CN-109234713-B | Chemical nickel plating solution and application thereof | 深圳市松柏实业发展有限公司 | 2020-12-01 | — | — | CN | disclosed |
| CN-109234713-B | Chemical nickel plating solution and application thereof | 深圳市松柏实业发展有限公司 | 2020-12-01 | — | — | CN | disclosed |
| US-9856572-B2 | Additive for reducing voids after annealing of copper plating with through silicon via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2018-01-02 | — | — | US | disclosed |
| US-20160190007-A1 | A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-30 | — | — | US | disclosed |
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | disclosed |
| CN-103361694-A | Micro-pore electroplated copper filling method for three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology | SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD | 2013-10-23 | — | — | CN | disclosed |