SCHEMBL18033700

SCHEMBL18033700

CC(C)OC(=O)n1cnc2cc(C(=O)O)ccc21

nearest known ligand 0.60

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ HCAR3 P49019 5/20 0.60
▸ FGFR1 P11362 3/20 0.53
▸ HPGD P15428 4/20 0.53
▸ ALDH1A1 P00352 1/20 0.50
▸ LMNA P02545 1/20 0.50
▸ TSHR P16473 1/20 0.49
▸ NPSR1 Q6W5P4 1/20 0.49
▸ THRB P10828 1/20 0.48
▸ HSD17B10 Q99714 2/20 0.47
▸ GAA P10253 1/20 0.47
▸ HCAR2 Q8TDS4 1/20 0.47
▸ RXRA P19793 1/20 0.45
▸ SMN1; SMN2 Q16637 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18031573 0.83 FGFR1 (0.46) HCAR3FGFR1HPGDGAASMN1; SMN2
SCHEMBL6174196 0.81 HCAR3 (0.53) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL28227235 0.79 FGFR1 (0.60) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL5036251 0.77 FGFR1 (0.57) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL18033712 0.76 HCAR3 (0.60) HCAR3HPGDHCAR2
SCHEMBL18033714 0.75 FGFR1 (0.53) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL14315485 0.74 KMT2A (0.46) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL18156658 0.74 ALDH1A1 (0.47) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL18033701 0.74 ALDH1A1 (0.47) HCAR3FGFR1HPGDALDH1A1LMNA
SCHEMBL599310 0.73 HCAR3 (0.65) HCAR3FGFR1HPGDALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
EP-3081987-A2 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-19 — — EP disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
EP-3062150-A2 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-08-31 — — EP disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
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