SCHEMBL18033714

SCHEMBL18033714

O=C(O)c1ccc2c(c1)ncn2C(=O)OCc1ccccc1

nearest known ligand 0.53

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ FGFR1 P11362 3/20 0.53
▸ HPGD P15428 2/20 0.50
▸ ALDH1A1 P00352 1/20 0.50
▸ LMNA P02545 1/20 0.50
▸ HCAR3 P49019 2/20 0.47
▸ HSD17B10 Q99714 2/20 0.44
▸ GAA P10253 1/20 0.44
▸ NR4A2 P43354 2/20 0.44
▸ NR4A1 P22736 1/20 0.43
▸ NR4A3 Q92570 1/20 0.43
▸ THRB P10828 1/20 0.43
▸ MEN1 O00255 1/20 0.43
▸ KMT2A Q03164 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9880610 0.85 ASAH1 (0.47) FGFR1ALDH1A1MEN1KMT2A
SCHEMBL7163540 0.84 ASAH1 (0.58) HPGDALDH1A1LMNAHSD17B10KMT2A
SCHEMBL21577138 0.78 RXRA (0.45) HCAR3HSD17B10
SCHEMBL24576309 0.78 ASAH1 (0.47) ALDH1A1LMNAMEN1KMT2A
SCHEMBL18033708 0.78 HCAR3 (0.60) HPGDHCAR3
SCHEMBL28227235 0.76 FGFR1 (0.60) FGFR1HPGDALDH1A1LMNAHCAR3
SCHEMBL18033700 0.75 HCAR3 (0.60) FGFR1HPGDALDH1A1LMNAHCAR3
SCHEMBL6174196 0.75 HCAR3 (0.53) FGFR1HPGDALDH1A1LMNAHCAR3
SCHEMBL17713149 0.75 P4HTM (0.43) ALDH1A1LMNAMEN1KMT2A
SCHEMBL6171436 0.74 ALDH1A1 (0.45) HPGDALDH1A1LMNAHSD17B10NR4A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
EP-3081987-A2 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-10-19 — — EP disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
EP-3062150-A2 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-08-31 — — EP disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
Send feedback