SCHEMBL18033701

SCHEMBL18033701

CCCCC(CC)COC(=O)n1cnc2cc(C(=O)O)ccc21

nearest known ligand 0.47

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 6/20 0.47
▸ MAPK1 P28482 3/20 0.47
▸ TSHR P16473 1/20 0.47
▸ HCAR3 P49019 6/20 0.46
▸ PLA2G4A P47712 1/20 0.45
▸ LMNA P02545 4/20 0.44
▸ CYP3A4 P08684 2/20 0.44
▸ HSD17B10 Q99714 1/20 0.44
▸ HPGD P15428 2/20 0.43
▸ CA2 P00918 1/20 0.43
▸ FGFR1 P11362 1/20 0.40
▸ RXRA P19793 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18156658 1.00 ALDH1A1 (0.47) ALDH1A1MAPK1TSHRHCAR3PLA2G4A
SCHEMBL18031565 0.87 ALDH1A1 (0.44) ALDH1A1MAPK1TSHRLMNACYP3A4
SCHEMBL25698202 0.84 ALDH1A1 (0.41) ALDH1A1MAPK1TSHRPLA2G4ALMNA
SCHEMBL18033713 0.81 HCAR3 (0.53) ALDH1A1MAPK1TSHRHCAR3PLA2G4A
SCHEMBL18033700 0.74 HCAR3 (0.60) ALDH1A1TSHRHCAR3LMNAHSD17B10
SCHEMBL18033714 0.73 FGFR1 (0.53) ALDH1A1HCAR3LMNAHSD17B10HPGD
SCHEMBL108086 0.72 ALDH1A1 (0.73) ALDH1A1MAPK1TSHRLMNACYP3A4
SCHEMBL828867 0.72 ALDH1A1 (0.85) ALDH1A1MAPK1TSHRLMNACYP3A4
Isophthalic Acid SCHEMBL28378656 0.72 ALDH1A1 (0.65) ALDH1A1MAPK1TSHRLMNACYP3A4
SCHEMBL6174196 0.71 HCAR3 (0.53) ALDH1A1TSHRHCAR3LMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9720323-B2 Chemically amplified positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-01 — — US disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
EP-3062150-A2 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2016-08-31 — — EP disclosed
US-20160246175-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-25 — — US disclosed
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