SCHEMBL18069178

SCHEMBL18069178

CCCCC#Cc1ccc2c3c(cccc13)C(=O)N(OS(=O)(=O)C(F)(F)F)C2=O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MEN1 O00255 6/20 0.39
▸ KMT2A Q03164 6/20 0.39
▸ MAPT P10636 4/20 0.39
▸ L3MBTL1 Q9Y468 3/20 0.39
▸ POLB P06746 2/20 0.39
▸ TDP1 Q9NUW8 2/20 0.37
▸ KCNH2 Q12809 1/20 0.37
▸ BRD4 O60885 6/20 0.35
▸ USP2 O75604 3/20 0.35
▸ HTT P42858 2/20 0.35
▸ ATM Q13315 2/20 0.35
▸ MAPK1 P28482 2/20 0.35
▸ RGS12 O14924 1/20 0.35
▸ NPSR1 Q6W5P4 1/20 0.35
▸ TLR9 Q9NR96 1/20 0.35
▸ KDM4E B2RXH2 4/20 0.34
▸ ALDH1A1 P00352 4/20 0.34
▸ HPGD P15428 2/20 0.34
▸ CYP1B1 Q16678 3/20 0.33
▸ KEAP1 Q14145 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18069148 0.96 KCNH2 (0.42) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069147 0.96 KCNH2 (0.42) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069146 0.96 KCNH2 (0.42) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069140 0.90 TDP1 (0.34) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18174463 0.89 MEN1 (0.37) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069208 0.89 TDP1 (0.34) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069167 0.89 TDP1 (0.39) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069175 0.88 TDP1 (0.40) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069142 0.86 KCNH2 (0.37) MEN1KMT2AMAPTL3MBTL1POLB
SCHEMBL18069168 0.86 MAPT (0.37) MEN1KMT2AMAPTL3MBTL1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230314943-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2023-10-05 — — US disclosed
US-20230314943-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME MERCK PATENT GMBH (DE) 2023-10-05 — — US disclosed
WO-2023162552-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD FOR SUBSTRATE WITH TEMPLATE, AND PRODUCTION METHOD FOR PLATED ARTICLE 東京応化工業株式会社 2023-08-31 — — WO disclosed
WO-2023162551-A1 METHOD FOR PRODUCING PLATED SHAPED ARTICLE 東京応化工業株式会社 2023-08-31 — — WO disclosed
US-20230004085-A1 METHOD FOR MANUFACTURING CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PREMIX SOLUTION FOR PREPARING CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, METHOD FOR MANUFACTURING PHOTOSENSITIVE DRY FILM, AND METHOD FOR MANUFACTURING PATTERNED RESIST FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-05 — — US disclosed
US-20220163888-A1 POSITIVE TYPE RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME MERCK PATENT GMBH (DE) 2022-05-26 — — US disclosed
US-20220026801-A1 CHEMICALLY AMPLIFIED POSITIVE -TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, AND METHOD OF MANUFACTURING PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD (JP) 2022-01-27 — — US disclosed
US-20200209748-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, AND METHOD OF MANUFACTURING PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2020-07-02 — — US disclosed
US-20200209739-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-07-02 — — US disclosed
US-20200142307-A1 CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE AND METHOD OF MANUFACTURING PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-07 — — US disclosed
US-9709886-B2 Sulfonic acid derivative compounds as photoacid generators in resist applications Heraeus Precious Metals North America Daychem LLC (US) 2017-07-18 — — US disclosed
US-9709886-B2 Sulfonic acid derivative compounds as photoacid generators in resist applications Heraeus Precious Metals North America Daychem LLC (US) 2017-07-18 — — US disclosed
EP-3182203-A1 A COMBINATION OF NIT DERIVATIVES WITH SENSITIZERS Heraeus Precious Metals North America Daychem LLC (US) 2017-06-21 — — EP disclosed
US-20170003587-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS HERAEUS EPURIO LLC 2017-01-05 — — US disclosed
US-20170003587-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS HERAEUS EPURIO LLC 2017-01-05 — — US disclosed
US-9477150-B2 Sulfonic acid derivative compounds as photoacid generators in resist applications Heraeus Precious Metals North America Daychem LLC (US) 2016-10-25 — — US disclosed
US-9477150-B2 Sulfonic acid derivative compounds as photoacid generators in resist applications Heraeus Precious Metals North America Daychem LLC (US) 2016-10-25 — — US disclosed
WO-2016148809-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS Heraeus Precious Metals North America Daychem LLC (US) 2016-09-22 — — WO disclosed
US-20160266487-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS HERAEUS EPURIO LLC 2016-09-15 — — US disclosed
US-20160266487-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS HERAEUS EPURIO LLC 2016-09-15 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200209739-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND COMPOUND CUTA, RAD51, PCNA MEN1 418/4885KMT2A 700/4885MAPT 2347/4885
US-20160266487-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS ALAD, MPST, ASIC1 MEN1 1317/4885KMT2A 1020/4885MAPT 3437/4885
US-20170003587-A1 SULFONIC ACID DERIVATIVE COMPOUNDS AS PHOTOACID GENERATORS IN RESIST APPLICATIONS ALAD, MPST, ASIC1 MEN1 1317/4885KMT2A 1020/4885MAPT 3437/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

Send feedback