SCHEMBL18135082

SCHEMBL18135082

CCC(C)(C)C(=O)Oc1cccc2c(OC)cccc12

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ESR1 P03372 2/20 0.44
▸ ESR2 Q92731 2/20 0.44
▸ MEN1 O00255 1/20 0.41
▸ KMT2A Q03164 1/20 0.41
▸ ATM Q13315 1/20 0.41
▸ HPGDS O60760 1/20 0.41
▸ L3MBTL1 Q9Y468 1/20 0.40
▸ GAA P10253 1/20 0.40
▸ CA12 O43570 1/20 0.40
▸ CA1 P00915 1/20 0.40
▸ CA2 P00918 1/20 0.40
▸ CA7 P43166 1/20 0.40
▸ CA9 Q16790 1/20 0.40
▸ CA14 Q9ULX7 1/20 0.40
▸ PLK1 P53350 1/20 0.39
▸ FABP7 O15540 1/20 0.39
▸ FABP3 P05413 1/20 0.39
▸ FABP5 Q01469 1/20 0.39
▸ ELANE P08246 1/20 0.38
▸ MRGPRX4 Q96LA9 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18135088 0.94 HPGDS (0.48) ESR1ESR2MEN1KMT2AATM
SCHEMBL15447048 0.87 LMNA (0.45) HPGDSL3MBTL1GAAELANECNR2
SCHEMBL92373 0.86 ESR1 (0.51) ESR1ESR2MEN1KMT2AGAA
SCHEMBL12021737 0.86 ALDH1A1 (0.41) ESR1ESR2MEN1KMT2AL3MBTL1
SCHEMBL18135087 0.86 GLA (0.41) L3MBTL1GAAELANEMRGPRX4CNR2
SCHEMBL16672587 0.85 POLB (0.46) KMT2AATML3MBTL1CA12CA1
SCHEMBL13706054 0.85 MEN1 (0.37) ESR1ESR2MEN1KMT2AATM
SCHEMBL7265465 0.84 ALDH1A1 (0.54) MEN1KMT2AL3MBTL1GAAFABP7
SCHEMBL12263813 0.84 ESR1 (0.37) ESR1ESR2MEN1KMT2AL3MBTL1
SCHEMBL13408039 0.84 ELANE (0.42) ESR1ESR2MEN1KMT2AL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9904169-B2 Photomask blank, resist pattern forming process, and method for making photomask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 — — US disclosed
US-20160299431-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
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