Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.54 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.54 |
| ▸ | PGR | P06401 | 1/20 | 0.54 |
| ▸ | GAA | P10253 | 1/20 | 0.54 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.54 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.54 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.53 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.53 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.53 |
| ▸ | MEN1 | O00255 | 1/20 | 0.53 |
| ▸ | RAB9A | P51151 | 1/20 | 0.53 |
| ▸ | TSHR | P16473 | 1/20 | 0.48 |
| ▸ | HPGD | P15428 | 2/20 | 0.47 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.47 |
| ▸ | FABP3 | P05413 | 5/20 | 0.46 |
| ▸ | FABP7 | O15540 | 4/20 | 0.46 |
| ▸ | FABP5 | Q01469 | 4/20 | 0.46 |
| ▸ | MMP2 | P08253 | 1/20 | 0.43 |
| ▸ | OGG1 | O15527 | 1/20 | 0.43 |
| ▸ | BCHE | P06276 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15447048 | 0.87 | LMNA (0.45) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL12419172 | 0.87 | ALDH1A1 (0.40) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL18671924 | 0.85 | ALDH1A1 (0.51) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL18135082 | 0.84 | ESR1 (0.44) | ALDH1A1HSD17B10GAAKDM4EKMT2A | |
| SCHEMBL15113866 | 0.84 | NQO2 (0.44) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL15113872 | 0.84 | EGFR (0.40) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL1538258 | 0.83 | ALDH1A1 (0.60) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL31748924 | 0.83 | ALDH1A1 (0.60) | ALDH1A1HSD17B10PGRGAAPTGS1 | |
| SCHEMBL18135087 | 0.83 | GLA (0.41) | ALDH1A1GAAKDM4EL3MBTL1TSHR | |
| SCHEMBL12021737 | 0.83 | ALDH1A1 (0.41) | ALDH1A1HSD17B10PGRGAAPTGS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230273521-A1 | CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20180210338-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-07-26 | — | — | US | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9513547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-06 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-20130095427-A1 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-18 | — | — | US | disclosed |
| US-20130071789-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130053526-A1 | POLYMER | JSR CORPORATION (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130045443-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120237876-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, MONOMER, POLYMER, AND PRODUCTION METHOD OF RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20110171579-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
| WO-2003045935-A1 | METHOD FOR ALKYLATING THE ALPHA CARBON OF THE 2-METHYLBUTYRATE SECONDARY CHAIN OF LOVASTATIN | FERMIC S.A. DE C.V. (MX) | 2003-06-05 | — | — | WO | disclosed |
| US-6472542-B1 | DECYCLIZATION, AMIDATION, SILATION PROTECTING HYDROXYLS WITH HEXAMETHYIDISILAZANE, METHYLATION, HYDROLYSIS OF AMIDE AND SILANOLS, AMMONIATION, LACTONATION AND RECRYSTALLIZATION; HIGH YIELD AND PURITY | FERMIC S.A. DE C.V. (MX) | 2002-10-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | RER1, NOC2L, RAD51 | ALDH1A1 2338/4885HSD17B10 4783/4885PGR 3808/4885 |
| US-20120237876-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, MONOMER, POLYMER, AND PRODUCTION METHOD OF RADIATION-SENSITIVE RESIN COMPOSITION | RAD51, RAD54L, MRE11 | ALDH1A1 2031/4885HSD17B10 2036/4885PGR 2138/4885 |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | ALDH1A1 3949/4885HSD17B10 4284/4885PGR 126/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.