SCHEMBL1818666

SCHEMBL1818666

O=C1c2[c][c]ccc2-c2ccccc21

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 5/20 0.48
KMT2A Q03164 5/20 0.48
S100A4 P26447 5/20 0.48
MAPT P10636 5/20 0.48
TDP2 O95551 4/20 0.48
LMNA P02545 4/20 0.48
POLB P06746 4/20 0.48
RAB9A P51151 4/20 0.48
BLM P54132 4/20 0.48
SMN1; SMN2 Q16637 4/20 0.48
PTPRC P08575 4/20 0.48
MAOA P21397 4/20 0.48
APAF1 O14727 3/20 0.48
NPC1 O15118 3/20 0.48
PLA2G1B P04054 3/20 0.48
ATG4B Q9Y4P1 3/20 0.48
PLIN1 O60240 2/20 0.48
MAPK1 P28482 2/20 0.48
PLIN5 Q00G26 2/20 0.48
ABHD5 Q8WTS1 2/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6003309 0.92 MEN1 (0.50) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL1663621 0.82 KDM4E (0.32) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL451060 0.82 KDM4E (0.32) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL18844 0.74 S100A4 (0.52) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL56824 0.70 CDC25B (0.55) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL4861795 0.70 CDC25B (0.55) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL339883 0.70 BACE1 (0.36) MAPTLMNAMAPK1HTTALDH1A1
SCHEMBL15602674 0.69 MEN1 (0.48) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL20203661 0.68 MEN1 (0.92) MEN1KMT2AS100A4MAPTTDP2
SCHEMBL31884 0.68 MEN1 (0.92) MEN1KMT2AS100A4MAPTTDP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2756353-B1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORP (JP) 2019-05-01 EP disclosed
US-10095111-B2 Pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-10-09 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-20170153545-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-01 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9632410-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2017-04-25 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9551933-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9470980-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2016-10-18 US disclosed
WO-2013047091-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 WO disclosed
US-20130084438-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 US disclosed
WO-2013047092-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 WO disclosed
WO-2013039243-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-21 WO disclosed
WO-2012070472-A1 METHOD OF PRODUCING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER CANON KABUSHIKI KAISHA (JP) 2012-05-31 WO disclosed
US-20110143273-A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS CANON KABUSHIKI KAISHA (JP) 2011-06-16 US disclosed
CN-102053511-A Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus CANON KK 2011-05-11 CN disclosed
EP-2317391-A1 Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus Canon Kabushiki Kaisha (JP) 2011-05-04 EP disclosed
JP-2006124533-A POLYMERIC MATERIAL AND POLYMERIC LIGHT-EMITTING ELEMENT SUMITOMO CHEMICAL CO LTD 2006-05-18 JP disclosed
JP-2006077164-A COPOLYMER AND POLYMER LIGHT-EMITTING ELEMENT USING THE SAME SUMITOMO CHEMICAL CO LTD 2006-03-23 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10095111-B2 Pattern forming method, method for manufacturing electronic device, and electronic device PRDM7, EED, RER1 MEN1 2780/4885KMT2A 291/4885S100A4 2636/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.