SCHEMBL18309867

SCHEMBL18309867

C=C(C)C(=O)Oc1ccc(O)c(F)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.47
KMT2A Q03164 2/20 0.44
ATM Q13315 1/20 0.44
MAPT P10636 2/20 0.40
POLB P06746 2/20 0.40
KDM4E B2RXH2 1/20 0.37
LMNA P02545 1/20 0.37
HSD17B10 Q99714 1/20 0.37
MIF P14174 2/20 0.36
CYP3A4 P08684 2/20 0.35
ESR1 P03372 3/20 0.34
ESR2 Q92731 3/20 0.34
ALDH1A1 P00352 1/20 0.34
HPGD P15428 1/20 0.34
MAPK1 P28482 1/20 0.34
SNCA P37840 1/20 0.34
MGLL Q99685 1/20 0.34
MAOB P27338 2/20 0.33
MAOA P21397 1/20 0.33
APEX1 P27695 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL32667335 1.00 ELANE (0.47) ELANEKMT2AATMMAPTPOLB
SCHEMBL17189626 0.88 LMNA (0.50) ELANEKMT2AATMKDM4ELMNA
SCHEMBL12636054 0.86 ELANE (0.50) ELANEKMT2AATMMAPTPOLB
SCHEMBL9607783 0.85 ELANE (0.49) ELANEKMT2AATMMAPTPOLB
SCHEMBL10643108 0.84 ELANE (0.51) ELANEKMT2AATMMAPTPOLB
SCHEMBL31097938 0.84 ELANE (0.51) ELANEKMT2AATMMAPTPOLB
SCHEMBL21322464 0.84 ELANE (0.40) ELANEKMT2AATMMAPTPOLB
SCHEMBL20344359 0.83 ELANE (0.47) ELANEKMT2AATMMAPTPOLB
SCHEMBL15496033 0.83 ELANE (0.50) ELANEKMT2AATMMAPTPOLB
SCHEMBL377567 0.82 CYP3A4 (0.52) ELANEKMT2AMAPTPOLBKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367210-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230367210-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305398-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20200218154-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-09 US disclosed
CN-108698973-B Polymerizable compound and liquid crystal composition using same DIC株式会社 2020-07-03 CN disclosed
US-20190144750-A1 POLYMERIZABLE COMPOUND AND LIQUID CRYSTAL COMPOSITION CONTAINING THE SAME DIC CORPORATION (JP) 2019-05-16 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed