Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TRPM4 | Q8TD43 | 1/20 | 0.68 |
| ▸ | CYP1A2 | P05177 | 3/20 | 0.50 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.50 |
| ▸ | FYN | P06241 | 1/20 | 0.50 |
| ▸ | MAOA | P21397 | 1/20 | 0.50 |
| ▸ | ACHE | P22303 | 1/20 | 0.50 |
| ▸ | AHR | P35869 | 1/20 | 0.50 |
| ▸ | NQO2 | P16083 | 1/20 | 0.48 |
| ▸ | HPRT1 | P00492 | 3/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.45 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.45 |
| ▸ | HPGD | P15428 | 2/20 | 0.45 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.45 |
| ▸ | TSHR | P16473 | 1/20 | 0.45 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.45 |
| ▸ | CASP1 | P29466 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.45 |
| ▸ | CYP1B1 | Q16678 | 1/20 | 0.44 |
| ▸ | THRB | P10828 | 1/20 | 0.44 |
| ▸ | MYC | P01106 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27760500 | 0.89 | TRPM4 (0.65) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL25622486 | 0.85 | TRPM4 (0.59) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL16554732 | 0.83 | TRPM4 (0.52) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL16107767 | 0.83 | TRPM4 (0.61) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL508755 | 0.81 | TRPM4 (1.00) | TRPM4CYP1A2NQO2HPRT1ALDH1A1 | |
| SCHEMBL4852383 | 0.81 | ALDH1A1 (0.59) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL29399180 | 0.81 | TRPM4 (1.00) | TRPM4CYP1A2NQO2HPRT1ALDH1A1 | |
| SCHEMBL28009661 | 0.81 | TRPM4 (0.72) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL4947995 | 0.80 | CYP1A2 (0.53) | TRPM4CYP1A2ERBB2FYNMAOA | |
| SCHEMBL4854639 | 0.79 | ALDH1A1 (0.56) | TRPM4CYP1A2ERBB2FYNMAOA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220089811-A1 | COMPOSITION FOR FILM FORMATION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, RESIST PATTERN FORMATION METHOD, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR PRODUCING UNDERLAYER FILM FOR LITHOGRAPHY, AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-03-24 | — | — | US | disclosed |
| US-20220089810-A1 | POLYCYCLIC POLYPHENOLIC RESIN AND METHOD FOR PRODUCING POLYCYCLIC POLYPHENOLIC RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-03-24 | — | — | US | disclosed |
| WO-2022045270-A1 | METHOD FOR PURIFYING COMPOUND OR POLYMER | 三菱瓦斯化学株式会社 | 2022-03-03 | — | — | WO | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| WO-2020145407-A1 | POLYCYCLIC POLYPHENOL RESIN AND PRODUCTION METHOD FOR POLYCYCLIC POLYPHENOL RESIN | 三菱瓦斯化学株式会社 | 2020-07-16 | — | — | WO | disclosed |
| WO-2020145406-A1 | FILM FORMING COMPOSITION, RESIST COMPOSITION, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, RESIST PATTERN FORMATION METHOD, COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY, METHOD FOR PRODUCING LOWER LAYER FILM FOR LITHOGRAPHY, AND CIRCUIT PATTERN FORMATION METHOD | 三菱瓦斯化学株式会社 | 2020-07-16 | — | — | WO | disclosed |
| US-10437148-B2 | Resist material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-10-08 | — | — | US | disclosed |
| US-10310377-B2 | Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-06-04 | — | — | US | disclosed |
| EP-3141959-B1 | LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-01-30 | — | — | EP | disclosed |
| US-20170145142-A1 | RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| US-20170144954-A1 | MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| EP-3141959-A1 | LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-03-15 | — | — | EP | disclosed |
| EP-3141957-A1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-03-15 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170144954-A1 | MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD | FRG1, MLLT3, FEM1B | TRPM4 770/4885CYP1A2 3665/4885ERBB2 2583/4885 |
| US-10310377-B2 | Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method | FRG1, MLLT3, FEM1B | TRPM4 770/4885CYP1A2 3665/4885ERBB2 2583/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.