SCHEMBL8738725

SCHEMBL8738725

CCC(C)C(=O)Oc1c2ccccc2c(O)c2ccccc12

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.39
GAA P10253 2/20 0.39
HPGD P15428 1/20 0.39
KDM4E B2RXH2 4/20 0.36
HSD17B10 Q99714 2/20 0.36
HTT P42858 2/20 0.36
LMNA P02545 1/20 0.36
TP53 P04637 1/20 0.36
MAPT P10636 1/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
KMT2A Q03164 1/20 0.36
ADORA3 P0DMS8 1/20 0.36
CASP3 P42574 1/20 0.35
CASP7 P55210 1/20 0.35
CASP9 P55211 1/20 0.35
FFAR1 O14842 1/20 0.35
TSHR P16473 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28301504 0.93 L3MBTL1 (0.40) ALDH1A1GAAKDM4EHSD17B10HTT
SCHEMBL12385764 0.90 GAA (0.38) ALDH1A1GAAHPGDKDM4EHSD17B10
SCHEMBL12419181 0.87 L3MBTL1 (0.37) ALDH1A1GAAHPGDKDM4EHSD17B10
SCHEMBL12419186 0.86 LMNA (0.37) ALDH1A1KDM4EHTTLMNAMAPT
SCHEMBL12419182 0.86 HSD17B10 (0.38) ALDH1A1KDM4EHSD17B10LMNAMAPT
SCHEMBL12419174 0.83 KDM4E (0.40) ALDH1A1GAAHPGDKDM4EHSD17B10
SCHEMBL18671982 0.83 ALDH1A1 (0.38) ALDH1A1GAAHPGDKDM4EHSD17B10
SCHEMBL8738223 0.82 LCK (0.37) ALDH1A1GAAKDM4EHSD17B10HTT
SCHEMBL15447053 0.78 LMNA (0.45) ALDH1A1KDM4ELMNAMAPTL3MBTL1
SCHEMBL15447052 0.77 HTT (0.40) ALDH1A1HPGDKDM4EHTTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 US disclosed
US-20180180992-A1 Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 US disclosed
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9904169-B2 Photomask blank, resist pattern forming process, and method for making photomask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20180039175-A1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
US-20180039177-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 US disclosed
US-20110200941-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
US-20110171579-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110143266-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-16 US disclosed
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-06 US disclosed
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-06 US disclosed
US-20100316955-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-16 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L ALDH1A1 3135/4885GAA 4821/4885HPGD 4286/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L ALDH1A1 2479/4885GAA 4772/4885HPGD 4476/4885
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SLC11A2, POLR2B, POLI ALDH1A1 3949/4885GAA 1890/4885HPGD 4873/4885
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS GRHPR, GLRA3, GLRA1 ALDH1A1 2589/4885GAA 903/4885HPGD 777/4885
US-20100143830-A1 SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS TYK2, VRK2, ARSA ALDH1A1 3818/4885GAA 3795/4885HPGD 4723/4885
US-20180180992-A1 Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process POLI, POLL, SLC11A2 ALDH1A1 2616/4885GAA 104/4885HPGD 4616/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.