SCHEMBL1897672

SCHEMBL1897672

C=C(C)C(=O)OC1CC2CCC1(CC)C2

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7714268 0.84
SCHEMBL4581541 0.81
SCHEMBL1904255 0.80
SCHEMBL5457410 0.78
SCHEMBL3135406 0.78 ALDH1A1 (0.31) ALDH1A1
SCHEMBL1898309 0.78 CYP3A4 (0.34) ALDH1A1
SCHEMBL8942160 0.75
SCHEMBL11908579 0.74 ALDH1A1 (0.31) ALDH1A1
SCHEMBL5396425 0.73
SCHEMBL453582 0.72 EPHX2 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1308782-B1 Chemically amplified positive resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2012-09-05 EP disclosed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-7312016-B2 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-25 US disclosed
US-7288363-B2 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-30 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20050233245-A1 Chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-20 US disclosed
US-6949323-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20030118934-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-26 US disclosed
EP-1308782-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-07 EP disclosed