SCHEMBL4581541

SCHEMBL4581541

C=C(C)C(=O)OC1CC2CCC1(CC(O)(C(F)(F)F)C(F)(F)F)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1897672 0.81 ALDH1A1 (0.30)
SCHEMBL16893269 0.75
SCHEMBL5457410 0.71
SCHEMBL1898309 0.71 CYP3A4 (0.34)
SCHEMBL3135406 0.71 ALDH1A1 (0.31)
SCHEMBL9987346 0.70
SCHEMBL452753 0.70
SCHEMBL452754 0.69
SCHEMBL8942160 0.69
SCHEMBL5396425 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7344821-B2 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same FUJIFILM CORPORATION (JP) 2008-03-18 US disclosed
US-20050221224-A1 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same FUJI PHOTO FILM CO., LTD. 2005-10-06 US disclosed
EP-1580601-A1 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same FUJI PHOTO FILM CO., LTD. (JP) 2005-09-28 EP disclosed