SCHEMBL5457410

SCHEMBL5457410

C=C(C)C(=O)OC1CC2CCC1(C(=O)O)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1898309 0.79 CYP3A4 (0.34)
SCHEMBL3135406 0.79 ALDH1A1 (0.31)
SCHEMBL1897672 0.78 ALDH1A1 (0.30)
SCHEMBL650900 0.78
SCHEMBL8942160 0.77
SCHEMBL5396425 0.74
SCHEMBL1315790 0.74 ELANE (0.36)
SCHEMBL3953694 0.72
SCHEMBL4581541 0.71
SCHEMBL8015746 0.69 HSD11B1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-6106998-A PHOTORESISTS SUITABLE FOR USE IN PHOTOLITHOGRAPHY THAT EMPLOYS AN ARF EXCIMER LASER; HIGH TRANSPARENCY TO EXPOSURE LIGHT HAVING A WAVELENGTH OF 220 NM OR LESS AND DRY-ETCH RESISTANCE NEC CORPORATION (JP) 2000-08-22 US disclosed