SCHEMBL1899451

SCHEMBL1899451

C=Cc1ccccc1C(=O)OC(C)OCCCC

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.46
L3MBTL1 Q9Y468 3/20 0.46
TDP1 Q9NUW8 2/20 0.46
ALDH1A1 P00352 8/20 0.42
CYP3A4 P08684 4/20 0.41
MAPK1 P28482 3/20 0.41
TP53 P04637 1/20 0.41
HSD17B10 Q99714 2/20 0.41
LMNA P02545 3/20 0.40
MAPT P10636 3/20 0.37
KMT2A Q03164 2/20 0.37
MEN1 O00255 1/20 0.37
NR1I2 O75469 1/20 0.37
CHRM2 P08172 1/20 0.37
ADRA2A P08913 1/20 0.37
OPRK1 P41145 1/20 0.37
HTR2B P41595 1/20 0.37
SLC6A3 Q01959 1/20 0.37
HDAC6 Q9UBN7 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1902387 0.92 ALDH1A1 (0.43) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL1897725 0.87 TSHR (0.40) TSHRALDH1A1CYP3A4HSD17B10LMNA
SCHEMBL5042438 0.86 TSHR (0.60) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL1896552 0.83 ALDH1A1 (0.46) TSHRTDP1ALDH1A1CYP3A4TP53
SCHEMBL3679498 0.81 ALDH1A1 (0.63) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL10626096 0.81 ALDH1A1 (0.62) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL1397837 0.81 TSHR (0.71) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL809877 0.80 TSHR (0.55) TSHRL3MBTL1TDP1ALDH1A1CYP3A4
SCHEMBL1895797 0.79 NPC1 (0.37) TSHRALDH1A1CYP3A4HSD17B10LMNA
SCHEMBL1897090 0.79 ALDH1A1 (0.39) TSHRALDH1A1CYP3A4HSD17B10LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed